公开(公告)号：US20110128864A1

公开(公告)日：2011-06-02

申请号：US12626965

申请日：2009-11-30

Applicant: Edmond W.W. Chan ,  Xiapu Luo ,  Rocky K.C. Chang

Inventor： Edmond W.W. Chan ,  Xiapu Luo ,  Rocky K.C. Chang

IPC: H04L12/26

CPC classification number: H04L43/12 ,  H04L43/0864

Abstract: A method for achieving fast and efficient measurement of path capacity of a communication network. The method includes the following steps: (a) transmitting a number of probes from a local endpoint to a remote endpoint over a network path and each probe contains at least two outgoing packets and each probe can elicit at least two response packets from the remote endpoint; (b) determining a first minDelay by measuring RTT between the time sending the first probe packet and the time receiving the first response packet; (c) determining a second minDelay by measuring RTT between the time sending the second probe packet and the time receiving the second response packet; and (d) determining a minimum delay difference by subtracting said first minDelay from said second minDelay. The minimum delay difference divided by packet size can be used as a measurement of the network path capacity.

Abstract translation: 一种用于实现通信网络的路径容量的快速有效测量的方法。 该方法包括以下步骤：（a）通过网络路径将多个探测器从本地端点传输到远程端点，并且每个探测器包含至少两个输出分组，并且每个探测器可以从远程端点引出至少两个响应分组 ; （b）通过在发送所述第一探测分组的时间与接收到所述第一响应分组的时间之间测量RTT来确定第一minDelay; （c）通过在发送第二探测分组的时间与接收第二响应分组的时间之间测量RTT来确定第二分钟周期; 以及（d）通过从所述第二minDelay中减去所述第一minDelay来确定最小延迟差。 最小延迟差除以数据包大小可用作网络路径容量的度量。

公开(公告)号：US20140159048A1

公开(公告)日：2014-06-12

申请号：US13898374

申请日：2013-05-20

Applicant: Chih-Fang Huang ,  Po-Chin Peng ,  Tsung-Chieh Hsiao ,  Ya-Hsien Liu ,  K.C. Chang ,  Hung-Der Su ,  Chien-Wei Chiu ,  Tsung-Yi Huang ,  Tsung-Yu Yang ,  Ting-Fu Chang

Inventor： Chih-Fang Huang ,  Po-Chin Peng ,  Tsung-Chieh Hsiao ,  Ya-Hsien Liu ,  K.C. Chang ,  Hung-Der Su ,  Chien-Wei Chiu ,  Tsung-Yi Huang ,  Tsung-Yu Yang ,  Ting-Fu Chang

IPC: H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/7789

Abstract: The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall.

Abstract translation: 本发明公开了一种高电子迁移率晶体管（HEMT）及其制造方法。 HEMT器件包括：衬底，第一氮化镓（GaN）层; P型GaN层，第二GaN层，势垒层，栅极，源极和漏极。 第一GaN层形成在基板上，并且具有从横截面视图的阶梯状轮廓。 P型GaN层形成在阶梯状轮廓的上台阶面上，具有垂直侧壁。 第二GaN层形成在P型GaN层上。 阻挡层形成在第二GaN层上。 在阻挡层与第一和第二GaN层之间的接合处形成二维电子气体区域。 门形成在垂直侧壁的外侧。