公开(公告)号：US08330159B2

公开(公告)日：2012-12-11

申请号：US11933841

申请日：2007-11-01

申请人： Jeffrey Lee Large ,  Henry Litzmann Edwards ,  Ayman A. Fayed ,  Patrick Cruise ,  Kah Mun Low ,  Neeraj Nayak ,  Oguz Altun ,  Chris Barr

发明人： Jeffrey Lee Large ,  Henry Litzmann Edwards ,  Ayman A. Fayed ,  Patrick Cruise ,  Kah Mun Low ,  Neeraj Nayak ,  Oguz Altun ,  Chris Barr

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： H01L23/58 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit (IC) includes a substrate having a device layer and a plurality of metal layers formed thereon. The plurality of metal layers include patterned upper metal layers and lower metal layers, a multi-level metal interconnect structure formed using the plurality of metal layers, where the interconnect structure is in electrical contact with a first portion and second portion of the device layer. At least one circuit editing structure including a first and second columns are formed using at least a portion of the plurality of metal layers, the first column being in electrical contact with the first portion of the device layer and the second column being in electrical contact with second portion of the device layer, where a portion of the first and second columns define a circuit editing feature operable to electrically couple or decouple the columns using focused ion beam (FIB) processing.

摘要翻译： 集成电路（IC）包括具有器件层和形成在其上的多个金属层的衬底。 多个金属层包括图案化的上金属层和下金属层，使用多个金属层形成的多层金属互连结构，其中互连结构与器件层的第一部分和第二部分电接触。 使用多个金属层的至少一部分形成包括第一和第二列的至少一个电路编辑结构，第一列与器件层的第一部分电接触，第二列与第二列电接触 器件层的第二部分，其中第一和第二列的一部分限定电路编辑特征，其可操作以使用聚焦离子束（FIB）处理电耦合或解耦列。

公开(公告)号：US20090114912A1

公开(公告)日：2009-05-07

申请号：US11933841

申请日：2007-11-01

申请人： Jeffrey Lee Large ,  Henry Litzmann Edwards ,  Ayman A. Fayed ,  Patrick Cruise ,  Kah Mun Low ,  Neeraj Nayak ,  Oguz Altun ,  Chris Barr

发明人： Jeffrey Lee Large ,  Henry Litzmann Edwards ,  Ayman A. Fayed ,  Patrick Cruise ,  Kah Mun Low ,  Neeraj Nayak ,  Oguz Altun ,  Chris Barr

IPC分类号： H01L23/58 ,  G03F1/00 ,  H01L21/66

CPC分类号： H01L23/58 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit (IC) includes a substrate having a device layer and a plurality of metal layers formed thereon. The plurality of metal layers include patterned upper metal layers and lower metal layers, a multi-level metal interconnect structure formed using the plurality of metal layers, where the interconnect structure is in electrical contact with a first portion and second portion of the device layer. At least one circuit editing structure including a first and second columns are formed using at least a portion of the plurality of metal layers, the first column being in electrical contact with the first portion of the device layer and the second column being in electrical contact with second portion of the device layer, where a portion of the first and second columns define a circuit editing feature operable to electrically couple or decouple the columns using focused ion beam (FIB) processing.

摘要翻译： 集成电路（IC）包括具有器件层和形成在其上的多个金属层的衬底。 多个金属层包括图案化的上金属层和下金属层，使用多个金属层形成的多层金属互连结构，其中互连结构与器件层的第一部分和第二部分电接触。 使用多个金属层的至少一部分形成包括第一和第二列的至少一个电路编辑结构，第一列与器件层的第一部分电接触，第二列与第二列电接触 器件层的第二部分，其中第一和第二列的一部分限定电路编辑特征，其可操作以使用聚焦离子束（FIB）处理来电耦合或解耦列。