公开(公告)号：US08912017B2

公开(公告)日：2014-12-16

申请号：US13463130

申请日：2012-05-03

Applicant: Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

Inventor： Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

IPC: H01L21/00 ,  H01L21/18 ,  H01L27/146

CPC classification number: H01L33/0079 ,  H01L21/187 ,  H01L27/14618 ,  H01L27/14683 ,  H01L33/0066 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.

Abstract translation: 用于接合半导体晶片的方法，其需要在接合的晶片之间并且跨接合界面传输电和光信号。 这些方法包括在晶片接合界面内形成电和光学互连通孔，以在接合的晶片之间转移电和光信号。 电气通孔使用多个金属柱形成，每个金属柱由多层金属组成，跨越接合表面。 光学通孔使用多个光波导形成，每个光波导由电介质材料构成，该电介质材料跨越接合界面并且具有高于接合晶片之间的电介质中间结合层的折射率的折射率。 电通孔和光通孔穿过接合的晶片之间的结合表面，以使得能够在结合的晶片之间均匀地传递电信号和光信号。

公开(公告)号：US20120288995A1

公开(公告)日：2012-11-15

申请号：US13463130

申请日：2012-05-03

Applicant: Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

Inventor： Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

IPC: H01L21/50

CPC classification number: H01L33/0079 ,  H01L21/187 ,  H01L27/14618 ,  H01L27/14683 ,  H01L33/0066 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.

Abstract translation: 用于接合半导体晶片的方法，其需要在接合的晶片之间并且跨接合界面传输电和光信号。 这些方法包括在晶片接合界面内形成电和光学互连通孔，以在接合的晶片之间转移电和光信号。 电穿孔通过多个金属柱形成在结合表面上，多个金属柱跨接在结合表面上。 通过使用多个光波导形成光通孔，每个光波导由电介质材料构成，该电介质材料在接合界面之间相互连接并且具有高于接合晶片之间的电介质中间结合层的折射率的折射率 。 电通孔和光通孔穿过接合的晶片之间的结合表面，以使得能够在结合的晶片之间均匀地传递电信号和光信号。