公开(公告)号：US08299548B2

公开(公告)日：2012-10-30

申请号：US13050813

申请日：2011-03-17

申请人： Kanako Komatsu ,  Tsubasa Yamada ,  Jun Morioka ,  Koji Kimura

发明人： Kanako Komatsu ,  Tsubasa Yamada ,  Jun Morioka ,  Koji Kimura

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include simultaneously forming a first field insulating film and at least one second field insulating film on a front face side of a semiconductor layer. The at least one second field insulating film is separated from the first field insulating film and thinner than the first field insulating film. The method can include forming a drift region of a first conductivity type in a region of the semiconductor layer including the first field insulating film and the second field insulating film. The method can include forming a drain region of the first conductivity type in the front face of the semiconductor layer on a side of the first field insulating film. In addition, the method can include forming a source region of the first conductivity type in the front face of the semiconductor layer on a side of the second field insulating film.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 该方法可以包括在半导体层的正面侧同时形成第一场绝缘膜和至少一个第二场绝缘膜。 所述至少一个第二场绝缘膜与所述第一场绝缘膜分离并且比所述第一场绝缘膜更薄。 该方法可以包括在包括第一场绝缘膜和第二场绝缘膜的半导体层的区域中形成第一导电类型的漂移区。 该方法可以包括在第一场绝缘膜一侧的半导体层的正面中形成第一导电类型的漏区。 此外，该方法可以包括在第二场绝缘膜的一侧在半导体层的正面形成第一导电类型的源极区域。

公开(公告)号：US20120025307A1

公开(公告)日：2012-02-02

申请号：US13050813

申请日：2011-03-17

申请人： Kanako Komatsu ,  Tsubasa Yamada ,  Jun Morioka ,  Koji Kimura

发明人： Kanako Komatsu ,  Tsubasa Yamada ,  Jun Morioka ,  Koji Kimura

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include simultaneously forming a first field insulating film and at least one second field insulating film on a front face side of a semiconductor layer. The at least one second field insulating film is separated from the first field insulating film and thinner than the first field insulating film. The method can include forming a drift region of a first conductivity type in a region of the semiconductor layer including the first field insulating film and the second field insulating film. The method can include forming a drain region of the first conductivity type in the front face of the semiconductor layer on a side of the first field insulating film. In addition, the method can include forming a source region of the first conductivity type in the front face of the semiconductor layer on a side of the second field insulating film.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 该方法可以包括在半导体层的正面侧同时形成第一场绝缘膜和至少一个第二场绝缘膜。 所述至少一个第二场绝缘膜与所述第一场绝缘膜分离并且比所述第一场绝缘膜更薄。 该方法可以包括在包括第一场绝缘膜和第二场绝缘膜的半导体层的区域中形成第一导电类型的漂移区。 该方法可以包括在第一场绝缘膜一侧的半导体层的正面中形成第一导电类型的漏区。 此外，该方法可以包括在第二场绝缘膜的一侧在半导体层的正面形成第一导电类型的源极区域。

公开(公告)号：US08421153B2

公开(公告)日：2013-04-16

申请号：US13241107

申请日：2011-09-22

申请人： Kanako Komatsu ,  Jun Morioka ,  Koji Shirai ,  Keita Takahashi ,  Tsubasa Yamada ,  Mariko Shimizu

发明人： Kanako Komatsu ,  Jun Morioka ,  Koji Shirai ,  Keita Takahashi ,  Tsubasa Yamada ,  Mariko Shimizu

IPC分类号： H01L29/66 ,  H01L27/088

CPC分类号： H01L29/7823 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/7816 ,  H01L29/7835

摘要： A first semiconductor layer extends from the element region to the element-termination region, and functions as a drain of the MOS transistor. A second semiconductor layer extends, below the first semiconductor layer, from the element region to the element-termination region. A third semiconductor layer extends from the element region to the element-termination region, and is in contact with the second semiconductor layer to function as a drift layer of the MOS transistor. A distance between a boundary between the first semiconductor layer and the field oxide film, and the end portion of the third semiconductor layer on the fifth semiconductor layer side in the element region is smaller than that between a boundary between the first semiconductor layer and the field oxide layer and an end portion of the third semiconductor layer on the fifth semiconductor layer side in the element-termination region.

摘要翻译： 第一半导体层从元件区域延伸到元件终止区域，并且用作MOS晶体管的漏极。 第二半导体层在第一半导体层下方从元件区域延伸到元件终止区域。 第三半导体层从元件区域延伸到元件终止区域，并且与第二半导体层接触，用作MOS晶体管的漂移层。 第一半导体层和场氧化膜之间的边界与元件区域中的第五半导体层侧的第三半导体层的端部之间的距离小于第一半导体层与场的边界之间的距离 氧化物层和元件终止区域中的第五半导体层侧的第三半导体层的端部。

公开(公告)号：US20120241858A1

公开(公告)日：2012-09-27

申请号：US13241107

申请日：2011-09-22

申请人： Kanako Komatsu ,  Jun Morioka ,  Koji Shirai ,  Keita Takahashi ,  Tsubasa Yamada ,  Mariko Shimizu

发明人： Kanako Komatsu ,  Jun Morioka ,  Koji Shirai ,  Keita Takahashi ,  Tsubasa Yamada ,  Mariko Shimizu

IPC分类号： H01L29/78

CPC分类号： H01L29/7823 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/7816 ,  H01L29/7835

摘要： A first semiconductor layer extends from the element region to the element-termination region, and functions as a drain of the MOS transistor. A second semiconductor layer extends, below the first semiconductor layer, from the element region to the element-termination region. A third semiconductor layer extends from the element region to the element-termination region, and is in contact with the second semiconductor layer to function as a drift layer of the MOS transistor. A distance between a boundary between the first semiconductor layer and the field oxide film, and the end portion of the third semiconductor layer on the fifth semiconductor layer side in the element region is smaller than that between a boundary between the first semiconductor layer and the field oxide layer and an end portion of the third semiconductor layer on the fifth semiconductor layer side in the element-termination region.

摘要翻译： 第一半导体层从元件区域延伸到元件终止区域，并且用作MOS晶体管的漏极。 第二半导体层在第一半导体层下方从元件区域延伸到元件终止区域。 第三半导体层从元件区域延伸到元件终止区域，并且与第二半导体层接触，用作MOS晶体管的漂移层。 第一半导体层和场氧化膜之间的边界与元件区域中的第五半导体层侧的第三半导体层的端部之间的距离小于第一半导体层与场的边界之间的距离 氧化物层和元件终止区域中的第五半导体层侧的第三半导体层的端部。