公开(公告)号：US20070158653A1

公开(公告)日：2007-07-12

申请号：US10586953

申请日：2005-01-24

申请人： Makoto Iida ,  Toshihiko Imai ,  Katsuichi Sato ,  Miho Iwabuchi ,  Masahiro Kato

发明人： Makoto Iida ,  Toshihiko Imai ,  Katsuichi Sato ,  Miho Iwabuchi ,  Masahiro Kato

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/10

摘要： The present invention is a silicon single crystal grown by CZ method, wherein Cu precipitates do not exist inside the silicon single crystal, a silicon wafer produced from the silicon single crystal, wherein Cu precipitates do not exist on a surface of and inside the wafer, and an apparatus for producing a silicon single crystal according to CZ method, wherein Cu concentration in a component made of quartz to be used in a part in which a temperature in a furnace for single crystal growth is 1000° C. or more is 1 ppb or less, and Cu concentration in a component made of quartz to be used in a part in which a temperature in a furnace for single crystal growth is less than 1000° C. is 10 ppb or less, and a method for producing a silicon single crystal by using the producing apparatus. Thereby, there are provided a silicon single crystal and a silicon wafer which have extremely few crystal defects and have high quality and high yield, a producing apparatus therefor, and a producing method therefor.

摘要翻译： 本发明是通过CZ法生长的硅单晶，其中在硅单晶内部不存在Cu析出物，由硅单晶制造的硅晶片，其中在晶片的表面和晶片内部不存在Cu析出物， 以及根据CZ法制造硅单晶的装置，其中在用于单晶生长炉的温度为1000℃以上的部分中使用的石英成分中的Cu浓度为1ppb 在单晶生长用炉内的温度小于1000℃的部分中使用的石英成分中的Cu浓度为10ppb以下，制造硅单体的方法 晶体。 由此，提供了具有极少的晶体缺陷并具有高质量和高产率的硅单晶和硅晶片及其制造装置及其制造方法。