公开(公告)号：US20130143388A1

公开(公告)日：2013-06-06

申请号：US13588119

申请日：2012-08-17

申请人： Katsumi ONO ,  Masato NEGISHI ,  Masato SUZUKI

发明人： Katsumi ONO ,  Masato NEGISHI ,  Masato SUZUKI

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01S5/0202

摘要： A method for manufacturing a semiconductor device includes forming a starting-point crack on a cleavage line on a surface of a semiconductor substrate; forming preliminary cracks intermittently along the cleavage line on the surface of the semiconductor substrate; and cleaving the semiconductor substrate along the cleavage line passing through the preliminary cracks, from the starting-point crack, wherein each of the preliminary cracks has a crack joining the cleavage line from outside of the cleavage line, in a direction of a progress of cleaving.

摘要翻译： 半导体器件的制造方法包括在半导体衬底的表面上的切割线上形成起点裂纹; 沿着半导体衬底的表面上的切割线间歇地形成初步裂纹; 并且从起始裂纹开始沿着穿过预裂纹的裂解线切割半导体衬底，其中每个预裂纹在切割进行方向上具有从切割线外部连接切割线的裂纹 。

公开(公告)号：USD360557S

公开(公告)日：1995-07-25

申请号：US13738

申请日：1993-09-30

申请人： Katsumi Ono ,  Yosimitu Kaga

设计人： Katsumi Ono ,  Yosimitu Kaga

公开(公告)号：US08673742B2

公开(公告)日：2014-03-18

申请号：US13588119

申请日：2012-08-17

申请人： Katsumi Ono ,  Masato Negishi ,  Masato Suzuki

发明人： Katsumi Ono ,  Masato Negishi ,  Masato Suzuki

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： H01L21/78 ,  H01S5/0202

摘要： A method for manufacturing a semiconductor device includes forming a starting-point crack on a cleavage line on a surface of a semiconductor substrate; forming preliminary cracks intermittently along the cleavage line on the surface of the semiconductor substrate; and cleaving the semiconductor substrate along the cleavage line passing through the preliminary cracks, from the starting-point crack, wherein each of the preliminary cracks has a crack joining the cleavage line from outside of the cleavage line, in a direction of a progress of cleaving.

摘要翻译： 半导体器件的制造方法包括：在半导体衬底的表面上的切割线上形成起点裂纹; 沿着半导体衬底的表面上的切割线间歇地形成初步裂纹; 并且从起始裂纹开始沿着穿过预裂纹的裂解线切割半导体衬底，其中每个预裂纹在切割进行方向上具有从切割线外部连接切割线的裂纹 。