公开(公告)号：US12119611B2

公开(公告)日：2024-10-15

申请号：US17408998

申请日：2021-08-23

申请人： NUVOTON TECHNOLOGY CORPORATION JAPAN

发明人： Masayuki Ono ,  Katsuya Samonji ,  Tohru Nishikawa ,  Hiroshi Asaka ,  Mitsuru Nishitsuji ,  Kazuya Yamada

IPC分类号： H01S5/0234 ,  H01S5/022 ,  H01S5/22 ,  H01S5/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01S5/0234 ,  H01S5/022 ,  H01S5/2207 ,  H01S5/4018 ,  H01S5/4031 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/32341

摘要： A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

公开(公告)号：US20240235154A9

公开(公告)日：2024-07-11

申请号：US17768286

申请日：2020-11-12

申请人： Sony Group Corporation

发明人： Yasuhiro KADOWAKI ,  Hideki WATANABE

IPC分类号： H01S5/10 ,  H01S5/02 ,  H01S5/22

CPC分类号： H01S5/1082 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/34333

摘要： A semiconductor laser including: a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate; and a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface.

公开(公告)号：US11973309B2

公开(公告)日：2024-04-30

申请号：US17283104

申请日：2019-03-07

申请人： Mitsubishi Electric Corporation

发明人： Tetsuya Uetsuji ,  Ayumi Fuchida ,  Masato Suzuki

IPC分类号： H01S5/02 ,  B28D5/00

CPC分类号： H01S5/0202 ,  B28D5/0011 ,  B28D5/0047 ,  B28D5/0052

摘要： In a semiconductor chip manufacturing device which produces a plurality of LD chips by dividing a semiconductor wafer, being placed in a casing in which a fluid medium is filled, on which a block line is formed in advance and also on which a scribed line is inscribed so that a microcrack is formed along the scribed line, the semiconductor chip manufacturing device comprises a reception stage for supporting the semiconductor wafer, and a blade cutting-edge for pressurizing the semiconductor wafer along its crack portion made of the block line or the scribed line, so that the semiconductor wafer is divided into a plurality of LD chips by pressurizing it by means of the blade cutting-edge along the crack portion in the fluid medium.

公开(公告)号：US11888286B2

公开(公告)日：2024-01-30

申请号：US17076162

申请日：2020-10-21

申请人： INPHI CORPORATION

发明人： Xiaoguang He ,  Radhakrishnan L. Nagarajan

IPC分类号： H01S5/02 ,  H01S5/0238 ,  H01S5/028 ,  H01S5/0237 ,  H01S5/227 ,  H01S5/22 ,  H01S5/0234

CPC分类号： H01S5/0238 ,  H01S5/0202 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/0287 ,  H01S5/2206 ,  H01S5/2275

摘要： A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.

公开(公告)号：US20240006849A1

公开(公告)日：2024-01-04

申请号：US18468800

申请日：2023-09-18

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Yasumasa KAWAKITA ,  Yoshito SAIJO ,  Yutaka OHKI

IPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/028 ,  H01S5/343 ,  H01S5/02

CPC分类号： H01S5/1082 ,  H01S5/16 ,  H01S5/0282 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/0202

摘要： A semiconductor laser device includes: a layered structure in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, and a contact layer are layered in a first direction, the layered structure including a facet in a second direction intersecting the first direction, the facet outputting laser light, a non-window region, and a window region, the window region having a bandgap larger than a bandgap of the non-window region; a first electrode electrically connected to the first conductivity type cladding layer; a second electrode that is formed on the contact layer and constitutes a current path through the layered structure with the first electrode; a passivation layer formed on the facet and having a bandgap larger than the bandgap of the window region; and a dielectric reflecting coating configured to cover an opposite side of the passivation layer from the facet.

公开(公告)号：US11862937B1

公开(公告)日：2024-01-02

申请号：US17094662

申请日：2020-11-10

申请人： Soraa Laser Diode, Inc.

发明人： James W. Raring

IPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343 ,  H01S5/028 ,  H01S5/10 ,  H01S5/00 ,  H01S5/40

CPC分类号： H01S5/2201 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3213 ,  H01S5/320275 ,  H01S5/34333 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/3202 ,  H01S5/32025 ,  H01S5/4025

摘要： Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

公开(公告)号：US09985417B1

公开(公告)日：2018-05-29

申请号：US15485474

申请日：2017-04-12

申请人： Soraa Laser Diode, Inc.

发明人： James W. Raring ,  Hua Huang

IPC分类号： H01S5/00 ,  H01S5/32 ,  H01S5/10 ,  H01S5/30 ,  H01S5/22 ,  H01S5/022 ,  H01S5/02

CPC分类号： H01S5/34333 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02276 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

摘要： Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.

公开(公告)号：US20180109078A1

公开(公告)日：2018-04-19

申请号：US15783152

申请日：2017-10-13

申请人： UNIVERSITÉ LAVAL

发明人： Martin BERNIER ,  Réal VALLÉE ,  Vincent FORTIN ,  Jean-Christophe GAUTHIER ,  Simon DUVAL

IPC分类号： H01S5/30 ,  H01S5/50 ,  H01S5/02 ,  H01S5/026 ,  H01S5/10 ,  H01S5/22 ,  H01S5/04 ,  H01S5/022 ,  H01S5/065

CPC分类号： H01S5/30 ,  G02B6/00 ,  H01S3/0064 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/06754 ,  H01S3/06758 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/1608 ,  H01S3/173 ,  H01S5/0202 ,  H01S5/02284 ,  H01S5/0265 ,  H01S5/041 ,  H01S5/0656 ,  H01S5/1003 ,  H01S5/2222 ,  H01S5/50

摘要： The mid-infrared laser system has an amplifier including at least one pump laser adapted to generate a pump laser beam and a length of fiber made of a low phonon energy glass and having at least one laser-active doped region between a first end and a second end, and a seed laser to generate a seed laser beam having a seed optical spectrum in the mid-infrared. The seed laser beam is launched into the first end to generate a mid-infrared laser beam outputted from the second end via stimulated emission upon pumping of the at least one laser-active doped region with the pump laser beam. When the power of the pump laser exceeds a spectrum modification threshold, the mid-infrared laser beam has an output optical spectrum being broadened relative to the seed optical spectrum.

公开(公告)号：US09882346B2

公开(公告)日：2018-01-30

申请号：US15104599

申请日：2014-12-10

申请人： KONINKLIJKE PHILIPS N.V.

发明人： Stephan Gronenborn ,  Gero Heusler ,  Ralf Gordon Conrads ,  Holger Moench

IPC分类号： H01S5/024 ,  H01S5/022 ,  H01S5/02 ,  H01S5/42 ,  H01L23/50 ,  H01L23/544

CPC分类号： H01S5/02476 ,  H01L23/50 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02288 ,  H01S5/02469 ,  H01S5/423 ,  H01L2924/00

摘要： The invention describes carrier structure (100, 200) for assembling a semiconductor lighting module, comprising at least two sub carriers (110, 210) and an alignment structure (120, 130, 230, 232) mechanically coupling the sub carriers (110, 210). The alignment structure (120, 130, 230, 232) is adapted such that the mechanical coupling to at least a part of the sub carriers (110, 210) disappears during thermal mating the carrier structure (100, 200) on a carrier (110, 250). The alignment structure (120, 130, 230, 232) is further adapted to compensate a coefficient of thermal expansion of a material of the carrier (110, 250) being higher than a coefficient of thermal expansion of a material of the carrier structure (100, 200). The invention further describes a semiconductor chip comprising such a carrier structure (100, 200) and a semiconductor lighting module comprising the carrier structure (100, 200) or the semiconductor chip. The invention finally describes a corresponding method of manufacturing a semiconductor lighting module. The invention enables assembling of semiconductor lighting modules by thermal mating with reduced alignment effort.

公开(公告)号：US09871349B2

公开(公告)日：2018-01-16

申请号：US15034256

申请日：2014-11-10

申请人： SONY CORPORATION

发明人： Kunihiko Tasai ,  Eiji Nakayama ,  Yuusuke Nakayama ,  Shigetaka Tomiya

IPC分类号： H01S5/343 ,  H01S5/02 ,  H01S5/10 ,  H01S5/32 ,  H01S5/22

CPC分类号： H01S5/34333 ,  H01S5/0202 ,  H01S5/1085 ,  H01S5/22 ,  H01S5/3202

摘要： There is provided a light-emitting element including a laminated structure including a first compound semiconductor layer having a first conductivity type, a second compound semiconductor layer having a second conductivity type different than the first conductivity type, and a third compound semiconductor layer formed between the first and second compound semiconductor layers and including an active layer. A second end surface of the second compound semiconductor layer and a third end surface of the third compound semiconductor layer are formed at respective second and third angles theta2 and theta3 relative to a virtual vertical direction of the laminated structure and satisfy the following relationship: “absolute value of theta3 is equal to or greater than 0 degree and smaller than absolute value of theta2”.