Magnetoresistive head structure that prevents under film from
undesirable etching
    1.
    发明授权
    Magnetoresistive head structure that prevents under film from undesirable etching 失效
    防止膜下不希望腐蚀的磁阻头结构

    公开(公告)号:US5371643A

    公开(公告)日:1994-12-06

    申请号:US927955

    申请日:1992-08-11

    IPC分类号: G11B5/39 G11B5/33

    CPC分类号: G11B5/3903 Y10T29/49052

    摘要: A magnetoresistive head is fabricated with a high yield rate by preventing the electrode film from breaking down. An upper shield film is formed with an electrode separation layer and an upper gap film disposed between it and the electrode film. The electrode film is prevented from being etched when the upper shield film is subjected to ion milling as a result. Further, the upper gap film is laid on top of the electrode separation layer, and a lead is satisfactorily protected and prevented from being exposed. Thus, the upper shield film and the lead are prevented from becoming short-circuited as a result of the disconnection of the electrode film and the exposure of the lead.

    摘要翻译: 通过防止电极膜破裂,以高产率制造磁阻头。 上部屏蔽膜形成有电极分离层和设置在其与电极膜之间的上间隙膜。 因此,当上屏蔽膜经受离子铣削时,防止电极膜被蚀刻。 此外,上间隙膜被放置在电极分离层的顶部,并且引线被令人满意地保护并防止暴露。 因此,由于电极膜的断开和引线的暴露,防止了上屏蔽膜和引线的短路。