Abstract:
A design support apparatus includes: a circuit-data generation unit to generate circuit data based on layout information of a semiconductor integrated circuit; and a parameter determination unit to set a first parameter relating to mechanical stress exerted on a transistor including at least one of a plurality of gates in a diffusion region, wherein the circuit-data generation unit obtains a mobility of the transistor based on the first parameter and reflects the mobility in the circuit data.
Abstract:
A plurality of gate electrode patterns to be laid out in parallel are alternately set as first patterns to be formed in a first exposure step of double patterning and as second patterns to be formed in a second exposure step. Subsequently, a circuit that includes transistor pairs each formed by connecting one of the first patterns and one of the second patterns in parallel is laid out. This reduces the risk of variations in characteristics of transistors caused by double patterning.
Abstract:
An extrusion die for forming a honeycomb stucture has a lattice molding groove formed in the outlet surface of the die body. In the inlet surface of the die body there are formed plural independent supply passages that are opposite to the intersecting portions of the molding groove and extend toward the outlet surface. A through hole is designed to communicate adjacent supply passages at a place that forms part of the partition wall between the supply passages and contacts with the molding groove. This through hole takes the combined shape of a trapezoid with the width of the molding groove as its top side and with the diameter of the supply passage as its maximum base side and a semicircle having said base side as its diameter.
Abstract:
A plurality of gate electrode patterns to be laid out in parallel are alternately set as first patterns to be formed in a first exposure step of double patterning and as second patterns to be formed in a second exposure step. Subsequently, a circuit that includes transistor pairs each formed by connecting one of the first patterns and one of the second patterns in parallel is laid out. This reduces the risk of variations in characteristics of transistors caused by double patterning.
Abstract:
A design support apparatus includes: a circuit-data generation unit to generate circuit data based on layout information of a semiconductor integrated circuit; and a parameter determination unit to set a first parameter relating to mechanical stress exerted on a transistor including at least one of a plurality of gates in a diffusion region, wherein the circuit-data generation unit obtains a mobility of the transistor based on the first parameter and reflects the mobility in the circuit data.