公开(公告)号：US20060043380A1

公开(公告)日：2006-03-02

申请号：US10505051

申请日：2003-02-18

申请人： Kawazoe Hiroshi ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

发明人： Kawazoe Hiroshi ,  Satoshi Kobayashi ,  Yuki Tani ,  Hiroaki Yanagita

IPC分类号： H01L33/00

CPC分类号： H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： A theme is to provide a field-effect light-emitting device that can obtain a long-term reliability and broaden a selectivity of emission wavelength. The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

摘要翻译： 主题是提供可以获得长期可靠性并扩大发射波长的选择性的场效应发光器件。 本申请的发明是一种场效应晶体管型发光器件，其具有电子注入电极，即源电极，空穴注入电极，即漏电极，设置在源电极和漏电极之间的发射有源元件 以及与两个电极接触的场施加电极，即用于在发射有源部件中诱发电子和空穴的场施加电极，其经由电绝缘部件或绝缘间隙设置在发射有源部件附近 。 发射有源部件由具有电子传输性和空穴传输性的无机半导体材料制成。