公开(公告)号：US5383984A

公开(公告)日：1995-01-24

申请号：US77602

申请日：1993-06-17

申请人： Yutaka Shimada ,  Hitoshi Kato ,  Junichi Kakizaki ,  Kazutugu Aoki ,  Haruki Mori ,  Tatsuo Shiotsuki

发明人： Yutaka Shimada ,  Hitoshi Kato ,  Junichi Kakizaki ,  Kazutugu Aoki ,  Haruki Mori ,  Tatsuo Shiotsuki

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01J37/32522 ,  H01J2237/2001 ,  H01J2237/334 ,  Y10S156/912

摘要： A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for exhausting the process tube, RF electrodes arranged along the outer circumference of the process tube and serving to generate high frequency electric field, when power is supplied, in a process-gas-introduced region so as to make process gas into plasmas, a high frequency power source for supplying power to the RF electrodes, heaters arranged in the process tube to directly heat the plural wafers, a power supply for supplying power to the heaters, and a controller for controlling the amount of power supplied from the power supply to the heaters.

摘要翻译： 一种基板处理装置，包括用于封闭多个半导体晶片的处理管，用于将处理气体引入到处理管中的喷射器，用于排出处理管的真空泵，沿着处理管的外周排列的RF电极， 在供给电力的高频电场中，在处理气体导入区域中，使工艺气体成为等离子体，向RF电极供电的高频电源，配置在处理管内的加热器，直接加热 多个晶片，用于向加热器供电的电源，以及用于控制从电源向加热器供电的电力量的控制器。