SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20120018849A1

    公开(公告)日:2012-01-26

    申请号:US13186227

    申请日:2011-07-19

    IPC分类号: H01L29/06 H01L21/78

    摘要: In a CSP type semiconductor device, the invention prevents a second wiring from forming a protruding portion toward a dicing line at the time of forming the second wiring that is connected to the back surface of a first wiring formed near a side surface portion of a semiconductor die on the front surface and extends onto the back surface of the semiconductor die over a step portion in a window that is formed from the back surface side of the semiconductor die so as to expose the back surface of the first wiring. A glass substrate is bonded on a semiconductor substrate on which a first wiring is formed on the front surface near a dicing line with a resin as an adhesive being interposed therebetween. The semiconductor substrate is then etched from the back surface to form a window having inclined sidewalls with the dicing line as a center. A second wiring is then formed so as to be connected to the back surface of the first wiring exposed in the window and extend over one of the sidewalls of the window, that extends perpendicular to the dicing line, onto the back surface of the semiconductor substrate.

    摘要翻译: 在CSP型半导体器件中,本发明在形成与形成在半导体的侧面部附近形成的第一布线的背面连接的第二布线时,防止第二布线向切割线形成突出部 在半导体管芯的背面侧形成的窗口中的台阶部分上延伸到半导体管芯的背面,露出第一布线的背面。 将玻璃基板接合在半导体基板上,在半导体基板上,在其上插入有作为粘合剂的树脂的切割线附近的前表面上形成有第一布线。 然后从后表面蚀刻半导体衬底以形成具有以切割线为中心的倾斜侧壁的窗口。 然后形成第二布线,以便连接到暴露在窗口中的第一布线的背面,并延伸到垂直于切割线延伸的窗口侧壁之一到半导体基板的背面上 。

    Semiconductor device and method of manufacturing the same
    2.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08796869B2

    公开(公告)日:2014-08-05

    申请号:US13204199

    申请日:2011-08-05

    IPC分类号: H01L23/48

    摘要: In a CSP type semiconductor device, the invention prevents a second wiring from forming a narrowed portion on a lower surface of a step portion at the time of forming the second wiring that is connected to the back surface of a first wiring formed near a side surface portion of a semiconductor die on the front surface and extends onto the back surface of the semiconductor die over the step portion of a window that is formed from the back surface side of the semiconductor die so as to expose the back surface of the first wiring. A glass substrate is bonded on a semiconductor substrate on which a first wiring is formed on the front surface near a dicing line with an adhesive resin being interposed therebetween. The semiconductor substrate is then etched from the back surface to form a window having step portions with inclined sidewalls around the dicing line as a center. A second wiring is then formed so as to be connected to the first wiring exposed in the window and extend onto the back surface of the semiconductor substrate over the step portions of the window except part of the step portions on the dicing line and near the dicing line, which extend perpendicular to the dicing line.

    摘要翻译: 在CSP型半导体器件中,本发明在形成与形成在侧面附近形成的第一布线的背面连接的第二布线时,防止第二布线在台阶部的下表面上形成变窄部 在半导体管芯的背面侧形成的窗口的台阶部延伸到半导体管芯的背面,露出第一布线的背面。 将玻璃基板接合在半导体基板上,在半导体基板上,在其上插入有粘合树脂的切割线附近的前表面上形成有第一布线。 然后从后表面蚀刻半导体衬底以形成具有以切割线为中心的倾斜侧壁的台阶部分的窗口。 然后形成第二布线,以便连接到暴露在窗口中的第一布线,并延伸到窗口的台阶部分上的除了切割线上的台阶部分的部分之外并且在切割部分附近的半导体基板的背面上 线,其垂直于切割线延伸。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20120032307A1

    公开(公告)日:2012-02-09

    申请号:US13204199

    申请日:2011-08-05

    IPC分类号: H01L29/06 H01L21/30

    摘要: In a CSP type semiconductor device, the invention prevents a second wiring from forming a narrowed portion on a lower surface of a step portion at the time of forming the second wiring that is connected to the back surface of a first wiring formed near a side surface portion of a semiconductor die on the front surface and extends onto the back surface of the semiconductor die over the step portion of a window that is formed from the back surface side of the semiconductor die so as to expose the back surface of the first wiring. A glass substrate is bonded on a semiconductor substrate on which a first wiring is formed on the front surface near a dicing line with an adhesive resin being interposed therebetween. The semiconductor substrate is then etched from the back surface to form a window having step portions with inclined sidewalls around the dicing line as a center. A second wiring is then formed so as to be connected to the first wiring exposed in the window and extend onto the back surface of the semiconductor substrate over the step portions of the window except part of the step portions on the dicing line and near the dicing line, which extend perpendicular to the dicing line.

    摘要翻译: 在CSP型半导体器件中,本发明在形成与形成在侧面附近形成的第一布线的背面连接的第二布线时,防止第二布线在台阶部的下表面上形成变窄部 在半导体管芯的背面侧形成的窗口的台阶部延伸到半导体管芯的背面,露出第一布线的背面。 将玻璃基板接合在半导体基板上,在半导体基板上,在其上插入有粘合树脂的切割线附近的前表面上形成有第一布线。 然后从后表面蚀刻半导体衬底以形成具有以切割线为中心的倾斜侧壁的台阶部分的窗口。 然后形成第二布线,以便连接到暴露在窗口中的第一布线,并延伸到除了切割线上的台阶部分的部分之外的窗口的台阶部分上并且在切割附近 线,其垂直于切割线延伸。