Substrate Processing Apparatus and Semiconductor Device Producing Method
    1.
    发明申请
    Substrate Processing Apparatus and Semiconductor Device Producing Method 审中-公开
    基板加工装置及半导体装置生产方法

    公开(公告)号:US20090137128A1

    公开(公告)日:2009-05-28

    申请号:US11887350

    申请日:2006-04-27

    摘要: Disclosed is a substrate processing apparatus including: a reaction tube to accommodate at least one substrate; at least a pair of electrodes disposed outside the reaction tube; and a dielectric member, wherein a plasma generation region is formed at least in a space between an inner wall of the reaction tube and an outer circumferential edge of the substrate, the member includes a main face extending in a radial direction of the substrate and in a substantially entire circumferential direction of the substrate in a horizontal plane parallel to a main face of the substrate, and is disposed in an outer circumferential region of the substrate, and gas activated in the plasma generation region is supplied through a surface region of the main face of the member to the substrate.

    摘要翻译: 公开了一种基板处理装置,包括:反应管,用于容纳至少一个基板; 至少一对设置在反应管外的电极; 以及电介质部件,其中至少在所述反应管的内壁和所述基板的外周边缘之间的空间中形成等离子体产生区域,所述部件包括沿所述基板的径向延伸的主面, 在与基板的主面平行的水平面上的基板的大致整个圆周方向,并且设置在基板的外周区域中,并且在等离子体产生区域中活化的气体通过主体的表面区域被供给 成员面向基板。