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公开(公告)号：US20190143321A1
公开(公告)日：2019-05-16
申请号：US16231817
申请日：2018-12-24
CPC分类号： B01L3/502707 , B01L2200/0668 , B01L2200/0684 , B01L2200/12 , B01L2300/0645 , B01L2300/0816 , B01L2300/0887 , B01L2300/161 , B01L2400/0406 , B01L2400/0418 , B05D1/005 , B81B2201/058 , B81B2203/04 , B81C1/00119 , H01J37/32009 , H01J2237/334
摘要： The present invention is notably directed to method of fabrication of a microfluidic chip, comprising: providing a substrate, a face of which is covered by an electrically insulating layer; obtaining a resist layer covering one or more selected portions of the electrically insulating layer, at least a remaining portion of said electrically insulating layer not being covered by the resist layer; partially etching with a wet etchant a surface of the remaining portion of the electrically insulating layer to create a recess and/or an undercut under the resist layer; depositing the electrically conductive layer on the etched surface, such that the electrically conductive layer reaches the created recess and/or undercut; and removing the resist layer to expose a portion of the electrically insulating layer adjoining a contiguous portion of the electrically conductive layer. The present invention is further directed to microfluidic chips obtainable by such methods.
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公开(公告)号：US20190084315A1
公开(公告)日：2019-03-21
申请号：US16086998
申请日：2016-07-19
发明人： James P. Shields
IPC分类号： B41J2/21 , H01J37/32 , G03G7/00 , G03C1/76 , C08F283/00
CPC分类号： B41J2/2107 , B41J2/2128 , B41J2/475 , B41J11/0015 , B41M5/0011 , B41M7/00 , C08F283/006 , G03C1/7614 , G03G7/0013 , G03G7/004 , H01J37/32009
摘要： The present disclosure is drawn to printing systems. In one example, a printing system can include a pretreatment head, an inkjet print head, and a post-treatment head. The pretreatment head can include a first plasma generator to apply a plasma treatment to a media substrate. The inkjet print head can be positioned with respect to the pretreatment head to form a printed image on the media substrate after the plasma treatment. The post-treatment head can include a second plasma generator positioned with respect to the inkjet print head to treat the printed image on the media substrate.
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3.发明申请公开(公告)号：US20180304643A1
公开(公告)日：2018-10-25
申请号：US15494830
申请日：2017-04-24
申请人： Xerox Corporation
CPC分类号： B41J3/4073 , B41J11/0015 , H01J37/32009 , H01J37/32449 , H01J2237/334
摘要： A surface treatment system includes a holder configured to secure an object within the holder and a plurality of surface treatment devices. Each surface treatment device is configured to treat a surface of the object within the holder differently than each of the other surface treatment devices in the plurality of surface treatment devices. A controller is configured to operate the surface treatment devices independently of one another so less than all of the devices can be operated to treat an object surface. Thus, the surface treatment system is capable of treating a wide range of materials for printing by a direct-to-object printer.
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公开(公告)号：US10060851B2
公开(公告)日：2018-08-28
申请号：US14863238
申请日：2015-09-23
申请人： Plexense, Inc.
发明人： Gibum Kim
IPC分类号： B05D1/18 , B05D1/00 , G01N21/552 , H01J37/32 , B05D3/14
CPC分类号： G01N21/554 , B05D1/185 , B05D3/147 , G01N21/553 , H01J37/32009 , H01J37/3255 , H01J37/32568
摘要： The disclosed technology relates to methods, apparatuses and systems for detecting molecules using surface plasmon resonance techniques, and more particularly to surface plasmon resonance techniques that employ metal nanoparticles formed on substrates. In one aspect, method of making a layer of metallic nanoparticles includes providing a liquid composition comprising a binder polymer and a solvent and at least partially immersing, into the liquid composition, an article comprising a polymeric surface, wherein the polymeric surface comprises a polymeric material and does not comprise an inorganic glass or crystalline material. The method additionally includes applying a gas phase plasma to the liquid composition to facilitate chemical reactions between the binder polymer and the polymeric material of the polymeric surface to form a binder layer on the polymeric surface of the article. The method further includes applying metallic nanoparticles onto the binder layer to form a metallic nanoparticle layer on the binder layer.
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公开(公告)号：US20180240664A9
公开(公告)日：2018-08-23
申请号：US15283159
申请日：2016-09-30
发明人： Bhadri N. Varadarajan , Bo Gong , Guangbi Yuan , Zhe Gui , Fengyuan Lai
IPC分类号： H01L21/02 , C23C16/50 , C23C16/455 , H01J37/32 , C23C14/48
CPC分类号： H01L21/02126 , C23C14/48 , C23C16/325 , C23C16/401 , C23C16/45523 , C23C16/45525 , C23C16/50 , H01J37/32009 , H01J37/3244 , H01J2237/334 , H01L21/02274 , H01L21/768 , H01L29/4983 , H01L29/78
摘要： Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber. Radicals of source gas in a substantially low energy state, such as radicals of hydrogen in the ground state, are provided from a remote plasma source into reaction chamber. In addition, co-reactant gas is flowed towards the reaction chamber. In some implementations, radicals of the co-reactant gas are provided from the remote plasma source into the reaction chamber. A flow rate of the co-reactant gas can be changed over time, incrementally or gradually, to form a multi-layered silicon carbide film or a graded silicon carbide film having a composition gradient from a first surface to a second surface of the graded silicon carbide film.
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公开(公告)号：US20180204717A1
公开(公告)日：2018-07-19
申请号：US15919372
申请日：2018-03-13
发明人： Nasser Razek
CPC分类号： H01L21/02046 , C23C14/022 , C23C16/50 , H01J37/32009 , H01J2237/08 , H01J2237/3137 , H01J2237/3151 , H01L21/67028
摘要： A method for the surface treatment of a substrate surface of a substrate includes arranging the substrate surface in a process chamber, bombarding the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, and introducing a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate includes a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, and means to introduce a second component into the process chamber to bind the removed impurities.
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公开(公告)号：US20180195179A1
公开(公告)日：2018-07-12
申请号：US15899234
申请日：2018-02-19
发明人： Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
CPC分类号： C23F1/12 , C23F4/00 , C30B33/12 , H01J37/32009 , H01J2237/334
摘要： Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
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公开(公告)号：US20180182599A1
公开(公告)日：2018-06-28
申请号：US15904231
申请日：2018-02-23
发明人： Michael W. Stowell , Qiwei Liang
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32009 , H01J37/32082 , H01J37/32119 , H01J37/32192 , H01J37/32238
摘要： A gas distribution plate for a plasma reactor has a dielectric front plate and a dielectric back plate bonded together, with gas injection orifices extending through the front plate and gas supply channels in the surface of front plate facing the back plate. The back plate is joined to a heat reflective plate, or the back plate itself is formed of a heat reflective material, such as Beryllium Oxide.
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公开(公告)号：US20180163312A1
公开(公告)日：2018-06-14
申请号：US15835262
申请日：2017-12-07
申请人： ASM IP Holding B.V.
发明人： Tom E. Blomberg , Varun Sharma , Suvi Haukka , Marko Tuominen , Chiyu Zhu
CPC分类号： C23F4/02 , C09K13/00 , C23F1/12 , H01J37/32009 , H01J37/3244 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32135
摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
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公开(公告)号：US09978639B2
公开(公告)日：2018-05-22
申请号：US15335721
申请日：2016-10-27
发明人： Siew Kit Hoi , Arvind Sundarrajan , Jiao Song
IPC分类号： H01L21/44 , H01L21/768 , H01L21/285 , H01L21/67 , H01J37/32 , C23C14/34 , C23C14/16
CPC分类号： H01L21/76865 , C23C14/046 , C23C14/165 , C23C14/34 , H01J37/32009 , H01J37/321 , H01J37/32339 , H01J37/3244 , H01L21/2855 , H01L21/67069 , H01L21/76862 , H01L21/76871 , H01L23/5226 , H01L23/53238 , H01L23/5329
摘要： Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.
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