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1.发明申请公开(公告)号：US20080131694A1
公开(公告)日：2008-06-05
申请号：US10592864
申请日：2005-02-18
Applicant: Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
Inventor： Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
IPC: C01B33/113 , B32B5/16 , C01B33/00
CPC classification number: C01B33/029 , C01B33/021 , Y10T428/25 , Y10T428/259 , Y10T428/268 , Y10T428/29 , Y10T428/298 , Y10T428/2982
Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400□, provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.
Abstract translation: 一种制造方法，包括通过进行甲硅烷气体的氧相反应和氧化单硅烷气体的氧化气体合成含硅粒子的氧化硅粒子的工序，以及在保持氧化硅粒子之后用氢氟酸除去氧化硅的工序 粉末在800-1400℃的惰性气氛中，提供高纯度硅纳米粒子，作为工业规模的高性能发光元件和电子部件的材料粉末非常实用。
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Patent Agency Ranking
2.发明授权公开(公告)号：US07850938B2
公开(公告)日：2010-12-14
申请号：US10592864
申请日：2005-02-18
Applicant: Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
Inventor： Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
IPC: C01B33/029
CPC classification number: C01B33/029 , C01B33/021 , Y10T428/25 , Y10T428/259 , Y10T428/268 , Y10T428/29 , Y10T428/298 , Y10T428/2982
Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400°, provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.
Abstract translation: 一种制造方法，包括通过进行甲硅烷气体的氧相反应和氧化单硅烷气体的氧化气体合成含硅粒子的氧化硅粒子的工序，以及在保持氧化硅粒子之后用氢氟酸除去氧化硅的工序 粉末在800-1400°的惰性气氛中，提供高纯度硅纳米粒子，它们作为工业规模的高性能发光元件和电子部件的材料粉末非常实用。
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公开(公告)号：US09092102B2
公开(公告)日：2015-07-28
申请号：US13821930
申请日：2011-10-18
Applicant: Katsumasa Kono , Keisaku Kimura
Inventor： Katsumasa Kono , Keisaku Kimura
IPC: G06F3/044
CPC classification number: G06F3/044 , G06F3/03547 , G06F2203/04103 , G06F2203/04112 , H03K17/9622 , H03K2017/9602 , H03K2017/9613 , H03K2217/96023 , H03K2217/960755
Abstract: The object of the present invention is to provide a touch switch that enables reduction in the low-sensitivity region where the contact by fingers cannot be detected. The touch switch of the present invention comprises an insulating layer; sensor electrodes as a plurality of first electrodes provided on one surface of the insulating layer; a plurality of wire portions provided on one surface of the insulating layer, individually connected to the sensor electrodes; and auxiliary electrodes as a plurality of second electrodes provided on the other surface of the insulating layer, each auxiliary electrode being provided in a portion opposite each sensor electrode, wherein a boundary of adjacent auxiliary electrodes is provided in a region between adjacent sensor electrodes.
Abstract translation: 本发明的目的是提供一种触摸开关，其能够减少不能检测到手指接触的低灵敏度区域。 本发明的触摸开关包括绝缘层; 传感器电极作为设置在所述绝缘层的一个表面上的多个第一电极; 设置在所述绝缘层的一个表面上并分别连接到所述传感器电极的多个导线部分; 以及辅助电极，设置在绝缘层的另一表面上的多个第二电极，每个辅助电极设置在每个传感器电极相对的部分中，其中相邻辅助电极的边界设置在相邻的传感器电极之间的区域中。
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公开(公告)号：US20130162596A1
公开(公告)日：2013-06-27
申请号：US13821930
申请日：2011-10-18
Applicant: Katsumasa Kono , Keisaku Kimura
Inventor： Katsumasa Kono , Keisaku Kimura
IPC: G06F3/044
CPC classification number: G06F3/044 , G06F3/03547 , G06F2203/04103 , G06F2203/04112 , H03K17/9622 , H03K2017/9602 , H03K2017/9613 , H03K2217/96023 , H03K2217/960755
Abstract: The object of the present invention is to provide a touch switch that enables reduction in the low-sensitivity region where the contact by fingers cannot be detected. The touch switch of the present invention comprises an insulating layer; sensor electrodes as a plurality of first electrodes provided on one surface of the insulating layer; a plurality of wire portions provided on one surface of the insulating layer, individually connected to the sensor electrodes; and auxiliary electrodes as a plurality of second electrodes provided on the other surface of the insulating layer, each auxiliary electrode being provided in a portion opposite each sensor electrode, wherein a boundary of adjacent auxiliary electrodes is provided in a region between adjacent sensor electrodes.
Abstract translation: 本发明的目的是提供一种触摸开关，其能够减少不能检测到手指接触的低灵敏度区域。 本发明的触摸开关包括绝缘层; 传感器电极作为设置在所述绝缘层的一个表面上的多个第一电极; 设置在所述绝缘层的一个表面上并分别连接到所述传感器电极的多个导线部分; 以及辅助电极，设置在绝缘层的另一表面上的多个第二电极，每个辅助电极设置在每个传感器电极相对的部分中，其中相邻辅助电极的边界设置在相邻的传感器电极之间的区域中。
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5.发明授权公开(公告)号：US08221881B2
公开(公告)日：2012-07-17
申请号：US12823314
申请日：2010-06-25
Applicant: Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
Inventor： Seiichi Sato , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
CPC classification number: C01B33/029 , C01B33/021 , Y10T428/25 , Y10T428/259 , Y10T428/268 , Y10T428/29 , Y10T428/298 , Y10T428/2982
Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400° C., provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.
Abstract translation: 一种制造方法，包括通过进行甲硅烷气体的氧相反应和氧化单硅烷气体的氧化气体合成含硅粒子的氧化硅粒子的工序，以及在保持氧化硅粒子之后用氢氟酸除去氧化硅的工序 粉末在800-1400℃的惰性气氛中，提供高纯度的硅纳米颗粒，其作为用于工业规模的高性能发光元件和电子部件的材料粉末非常实用。
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6.发明申请公开(公告)号：US20100261007A1
公开(公告)日：2010-10-14
申请号：US12823314
申请日：2010-06-25
Applicant: Seiichi SATO , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
Inventor： Seiichi SATO , Keisaku Kimura , Takashi Kawasaki , Takuya Okada
IPC: C01B33/021 , B32B5/16
CPC classification number: C01B33/029 , C01B33/021 , Y10T428/25 , Y10T428/259 , Y10T428/268 , Y10T428/29 , Y10T428/298 , Y10T428/2982
Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400° C., provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.
Abstract translation: 一种制造方法，包括通过进行甲硅烷气体的氧相反应和氧化单硅烷气体的氧化气体合成含硅粒子的氧化硅粒子的工序，以及在保持氧化硅粒子之后用氢氟酸除去氧化硅的工序 粉末在800-1400℃的惰性气氛中，提供高纯度的硅纳米颗粒，其作为用于工业规模的高性能发光元件和电子部件的材料粉末非常实用。
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