Polishing of semiconductor substrates
    1.
    发明授权
    Polishing of semiconductor substrates 有权
    半导体衬底抛光

    公开(公告)号:US06676718B2

    公开(公告)日:2004-01-13

    申请号:US10005253

    申请日:2001-12-04

    IPC分类号: C09G102

    CPC分类号: H01L21/3212 C09G1/02

    摘要: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.

    摘要翻译: 根据本发明,水性抛光组合物包括研磨颗粒和碱性pH值的水以通过使用抛光垫通过CMP去除阻挡层,水性抛光组合物还包括仅具有多个极性键合位点的极性分子,形成相应的氢 在半导体衬底的水合二氧化硅介电层上与硅烷醇键合基团键合,形成最小化侵蚀的极性分子的亲水性保护膜。