公开(公告)号：US20060286694A1

公开(公告)日：2006-12-21

申请号：US11455839

申请日：2006-06-20

申请人： Bor-Jen Wu ,  Mei-Hui Wu ,  Ken Kai-fu Chang ,  Chien-An Chen ,  Yuan-Hsiao Chang ,  Li-Shei Yeh

发明人： Bor-Jen Wu ,  Mei-Hui Wu ,  Ken Kai-fu Chang ,  Chien-An Chen ,  Yuan-Hsiao Chang ,  Li-Shei Yeh

IPC分类号： H01L21/00

CPC分类号： H01L33/0079

摘要： A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.

摘要翻译： 随后在半导体衬底上形成高蚀刻选择层和发光结构。 然后，在发光结构上随后形成p型欧姆接触层和金属基板。 去除半导体衬底和高蚀刻选择层。 接下来，与发光结构的与金属层相反的表面相邻地形成n型电极和透明导电层。