Device for isolation of seed crystals during processing of solution
    1.
    发明授权
    Device for isolation of seed crystals during processing of solution 失效
    在处理溶液期间分离晶种的装置

    公开(公告)号:US5904772A

    公开(公告)日:1999-05-18

    申请号:US914844

    申请日:1997-08-18

    IPC分类号: C30B7/00 C30B9/00 C30B35/00

    摘要: A device for isolation of see crystals during processing of solutions. The device enables a seed crystal to be introduced into the solution without exposing the solution to contaminants or to sources of drying and cooling. The device constitutes a seed protector which allows the seed to be present in the growth solution during filtration and overheating operations while at the same time preventing the seed from being dissolved by the under saturated solution. When the solution processing has been completed and the solution cooled to near the saturation point, the seed protector is opened, exposing the seed to the solution and allowing growth to begin.

    摘要翻译: 用于在处理溶液期间分离晶体的装置。 该装置能够将晶种引入溶液中而不将溶液暴露于污染物或干燥和冷却来源。 该装置构成种子保护器,其允许种子在过滤和过热操作期间存在于生长溶液中,同时防止种子被饱和溶液溶解。 当溶液处理完成并且溶液冷却到接近饱和点时,种子保护剂打开,将种子暴露于溶液中并允许生长开始。

    Direct flow crystal growth system
    2.
    发明授权
    Direct flow crystal growth system 失效
    直流晶体生长系统

    公开(公告)号:US5122224A

    公开(公告)日:1992-06-16

    申请号:US428538

    申请日:1989-10-30

    IPC分类号: C30B7/00

    摘要: A crystal is grown in a constantly filtered solution which is flowed directly into the growing face of a crystal. In a continuous flow system, solution at its saturation temperature is removed from a crystal growth tank, heated above its saturation temperature, filtered, cooled back to its saturation temperature, and returned to the tank.

    摘要翻译: 将晶体生长在不断过滤的溶液中,该溶液直接流入晶体的生长面。 在连续流动系统中,将其饱和温度的溶液从晶体生长槽中除去,在其饱和温度以上加热,过滤,冷却至饱和温度,并返回到罐中。

    Plenum type crystal growth process
    3.
    发明授权
    Plenum type crystal growth process 失效
    Plenum型晶体生长过程

    公开(公告)号:US5123997A

    公开(公告)日:1992-06-23

    申请号:US428536

    申请日:1989-10-30

    IPC分类号: C30B7/00

    CPC分类号: C30B7/00 C30B29/14

    摘要: Crystals are grown in a tank which is divided by a baffle into a crystal growth region above the baffle and a plenum region below the baffle. A turbine blade or stirring wheel is positioned in a turbine tube which extends through the baffle to generate a flow of solution from the crystal growing region to the plenum region. The solution is pressurized as it flows into the plenum region. The pressurized solution flows back to the crystal growing region through return flow tubes extending through the baffle. Growing crystals are positioned near the ends of the return flow tubes to receive a direct flow of solution.

    摘要翻译: 晶体生长在由挡板分隔成挡板上方的晶体生长区域和挡板下方的增压区域的槽中。 涡轮叶片或搅拌轮定位在涡轮管中,涡轮机叶片或搅拌轮延伸穿过挡板以产生从晶体生长区域到增压区域的溶液流。 该溶液在流入增压室时被加压。 加压溶液通过延伸穿过挡板的回流管流回到晶体生长区域。 生长的晶体位于回流管的端部附近以接收直接的溶液流。