公开(公告)号：US20170253960A1

公开(公告)日：2017-09-07

申请号：US15598366

申请日：2017-05-18

申请人： GTAT Corporation

发明人： Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Carl Chartier ,  Adriano Servini ,  Chandra P. Khattak

IPC分类号： C23C16/24 ,  C23C16/458 ,  C23C16/44 ,  C01B33/035

CPC分类号： C23C16/24 ,  C01B33/035 ,  C23C16/4418 ,  C23C16/458 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/104

摘要： The bulk polysilicon deposition rate of a Siemens method CVD reactor system having a power supply configured for deposition on a solid rod silicon filament of a specified diameter and length is increased by installing a high surface area silicon filament in the CVD reactor in lieu of the specified solid rod filament, the high surface area filament being dimensionally configured such that it can be used in place of the solid rod filament without reconfiguring or replacing the reactor power supply. The high surface area filament can be tubular, flat, or shaped with radial fins. Existing reactors thereby require only adaptation or replacement of filament supports to be adapted for use of the high surface area filament. The high surface area filament can be grown from silicon melt using the EFG method, so as to maintain a cross-sectional shape within a tolerance of +/−10%.

公开(公告)号：US09683286B2

公开(公告)日：2017-06-20

申请号：US11413425

申请日：2006-04-28

申请人： Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra P. Khattak

发明人： Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra P. Khattak

IPC分类号： C23C16/00 ,  C23C16/24 ,  C01B33/035 ,  C23C16/44 ,  C23C16/458

CPC分类号： C23C16/24 ,  C01B33/035 ,  C23C16/4418 ,  C23C16/458 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/104

摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.

公开(公告)号：US20170096746A1

公开(公告)日：2017-04-06

申请号：US15383388

申请日：2016-12-19

申请人： GTAT Corporation

发明人： Frederick Schmid ,  David B. Joyce ,  John Brouillette ,  Daniel P. Betty ,  Ryan Philpott

IPC分类号： C30B11/00 ,  C30B29/20 ,  C30B11/02

CPC分类号： C30B11/003 ,  C30B11/00 ,  C30B11/02 ,  C30B15/00 ,  C30B17/00 ,  C30B29/20 ,  Y10T117/1008 ,  Y10T117/1024

摘要： A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.

公开(公告)号：US09546434B2

公开(公告)日：2017-01-17

申请号：US12873388

申请日：2010-09-01

申请人： Frederick Schmid ,  David B. Joyce ,  John Brouillette ,  Daniel P. Betty ,  Ryan Philpott

发明人： Frederick Schmid ,  David B. Joyce ,  John Brouillette ,  Daniel P. Betty ,  Ryan Philpott

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B29/20

CPC分类号： C30B11/003 ,  C30B11/00 ,  C30B11/02 ,  C30B15/00 ,  C30B17/00 ,  C30B29/20 ,  Y10T117/1008 ,  Y10T117/1024

摘要： A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.

摘要翻译： 用于最小化用于处理诸如生长晶体的材料的真空炉中的不需要的辅助反应的方法。 该过程在炉室环境中进行，其中氦气以流速进入炉室以冲洗出杂质并以预定压力达到热区域的热稳定性，以最小化热流变化并使温度梯度最小化 在热区。 在冷却时，氦气压力用于降低热梯度，以提高冷却速度。

公开(公告)号：US20160368058A1

公开(公告)日：2016-12-22

申请号：US15254576

申请日：2016-09-01

申请人： Maria Bozena WINNICKA ,  Gary A. ROZAK

发明人： Maria Bozena WINNICKA ,  Gary A. ROZAK

IPC分类号： B22F7/06 ,  B22F3/24 ,  B22F3/00 ,  C30B29/20 ,  B22F3/04 ,  B22F3/10 ,  C30B35/00 ,  B22F3/16 ,  B22F7/00

CPC分类号： C30B35/002 ,  B22F3/001 ,  B22F3/04 ,  B22F3/1007 ,  B22F3/1017 ,  B22F3/16 ,  B22F3/24 ,  B22F5/00 ,  B22F5/10 ,  B22F7/008 ,  B22F7/06 ,  B22F2003/248 ,  B22F2201/013 ,  B22F2301/20 ,  B22F2302/45 ,  B22F2998/10 ,  B22F2999/00 ,  C30B11/002 ,  C30B15/10 ,  C30B29/20 ,  Y10T117/1024 ,  B22F2201/016 ,  B22F2203/11 ,  B22F2207/01

摘要： In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article.

公开(公告)号：US09422637B2

公开(公告)日：2016-08-23

申请号：US13306973

申请日：2011-11-29

申请人： Young-Ho Hong ,  Se-Geun Ha ,  Yo-Han Jung

发明人： Young-Ho Hong ,  Se-Geun Ha ,  Yo-Han Jung

IPC分类号： C30B15/26 ,  C30B15/20 ,  C30B15/22

CPC分类号： C30B15/26 ,  C30B15/20 ,  C30B15/22 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024

摘要： Provides are a system of controlling a diameter of a single crystal ingot and a single crystal ingot growing apparatus including the same. The system of controlling a diameter of a single crystal ingot includes: a diameter measuring sensor measuring a diameter of a single crystal ingot; a Low-Pass Filter (LPF) removing short period noise from measured data from the diameter measuring sensor; and an Automatic Diameter Control (ADC) sensor controlling the diameter of the single crystal ingot through controlling of a pull speed by using data having the noise removed as current data.

摘要翻译： 提供一种控制单晶锭的直径的系统和包括其的单晶锭生长装置。 控制单晶锭直径的系统包括：测量单晶锭直径的直径测量传感器; 低通滤波器（LPF）从直径测量传感器的测量数据中消除短周期噪声; 以及通过使用具有作为当前数据去除的噪声的数据来控制拉速来控制单晶锭直径的自动直径控制（ADC）传感器。

公开(公告)号：US20160240440A1

公开(公告)日：2016-08-18

申请号：US15141783

申请日：2016-04-28

申请人： Ultratech, Inc.

发明人： Arthur W. Zafiropoulo ,  Yun Wang ,  Andrew M. Hawryluk

IPC分类号： H01L21/822 ,  H01L27/06 ,  H01L21/02

CPC分类号： H01L21/8221 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02678 ,  H01L27/0688 ,  Y10T29/53174 ,  Y10T117/1024

摘要： Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with each other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes.

摘要翻译： 提供了在基板上形成三维电路的系统和工艺。 辐射源产生被引导到衬底上的光束，该衬底具有介于电路层之间的隔离层。 电路层通过呈现结晶表面的种子区域相互连通。 至少一个电路层具有显示不适于在其中形成电路特征的电子性质的初始微结构。 在可控地热处理之后，具有不合适特性的电路层的初始微结构被转化成具有适于形成电路特性的电子特性的微结构。 还提供了可选地由本发明的系统和/或过程形成的三维电路结构。

公开(公告)号：US09281438B2

公开(公告)日：2016-03-08

申请号：US12679372

申请日：2008-09-26

申请人： Takeshi Hatakeyama ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Osamu Yamada

发明人： Takeshi Hatakeyama ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Osamu Yamada

IPC分类号： C30B19/02 ,  H01L33/00 ,  C30B9/10 ,  C30B29/40 ,  H01L21/02

CPC分类号： H01L33/0075 ,  C30B9/10 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  Y10T117/1024

摘要： A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.

摘要翻译： 将III族元素氮化物单晶生长在浸渍在坩埚中的原料液中并含有III族材料和碱金属和碱土金属之一的模板上。 将单晶生长后剩余的原料液冷却固化，通过将含有羟基的溶液进料到坩埚中，将凝固的原料从模板周围除去，因此III族元素氮化物单晶 从凝固的原料中取出。 模板设置在远离坩埚底部的位置。

公开(公告)号：US09212431B2

公开(公告)日：2015-12-15

申请号：US11863894

申请日：2007-09-28

申请人： Shinichi Kawazoe ,  Fukuo Ogawa ,  Yasuhito Narushima ,  Tsuneaki Tomonaga ,  Toshimichi Kubota

发明人： Shinichi Kawazoe ,  Fukuo Ogawa ,  Yasuhito Narushima ,  Tsuneaki Tomonaga ,  Toshimichi Kubota

IPC分类号： C30B35/00 ,  C30B15/00 ,  C30B15/14 ,  C30B11/00 ,  C30B29/06

CPC分类号： C30B15/00 ,  C30B11/003 ,  C30B15/14 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1068

摘要： A graphite member utilized in a pulling device for pulling a silicon single crystal is provided. An edge part of the graphite member is rounded off which is exposed to a reactive gas. The graphite member may comprise: a plate part having a thickness of ‘t’ wherein a curvature radius of ‘r’ satisfies the formula: t/8≦r≦t/4.

摘要翻译： 提供了用于牵引单晶硅的牵引装置中的石墨部件。 石墨构件的边缘部分被倒圆，其暴露于反应性气体。 石墨构件可以包括：具有“t”厚度的板部分，其中曲率半径'r'满足公式：t / 8＆nlE; r＆nlE; t / 4。

公开(公告)号：US09157167B1

公开(公告)日：2015-10-13

申请号：US13556105

申请日：2012-07-23

申请人： Rajeev T. Pakalapati ,  Mark P. D'Evelyn

发明人： Rajeev T. Pakalapati ,  Mark P. D'Evelyn

IPC分类号： C30B7/10

CPC分类号： C30B7/10 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/002 ,  B30B11/005 ,  C30B29/403 ,  C30B29/406 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

摘要： A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.

摘要翻译： 公开了一种用于加工超临界流体的高压装置和相关方法。 在某些实施方案中，本装置包括胶囊，加热器，至少一个陶瓷环或多个环，任选地，存在一个或多个划痕和/或裂纹。 在某些实施例中，该装置具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和功率控制系统。 在某些实施例中，高压设备被构造成使得加热器外径与陶瓷环之间的直径环形间隙被选择成在特定温度和压力之上提供径向承载接触。 在某些实施方案中，该装置能够获得0.2GPa至2GPa的压力和400℃至1200℃的温度。