公开(公告)号：US20070127161A1

公开(公告)日：2007-06-07

申请号：US11634037

申请日：2006-12-05

申请人： Masashi Sano ,  Kento Edakawa ,  Nobuyoshi Morizumi ,  Norio Kiuchi

发明人： Masashi Sano ,  Kento Edakawa ,  Nobuyoshi Morizumi ,  Norio Kiuchi

IPC分类号： G11B5/33

CPC分类号： G11B5/3903 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/6005 ,  G11B5/6064 ,  H01C7/006

摘要： A thin-film resistor that has a stable electric resistance, the phase transformation to the α-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a β-phase tantalum film or an alloy film mainly containing β-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the β-phase crystal is most strongly oriented to the layer surface.

摘要翻译： 提供了具有稳定的电阻的薄膜电阻器，即使在高温环境中也抑制了对α相的相变。 该薄膜电阻器具有如下层状结构：将由镍和铜构成的合金膜，含有镍和铬的合金膜或含有铜和锰的合金膜的双层膜形成的基底层层叠在 或由含镍和铬的单一合金膜形成; 以及由β相钽膜或主要含有β相钽的合金膜形成并沉积在基底层上的电阻层，所述电阻层具有晶体结构，其中β相的（002）面 晶体最强烈地取向于层表面。

公开(公告)号：US07643247B2

公开(公告)日：2010-01-05

申请号：US11634037

申请日：2006-12-05

申请人： Masashi Sano ,  Kento Edakawa ,  Nobuyoshi Morizumi ,  Norio Kiuchi

发明人： Masashi Sano ,  Kento Edakawa ,  Nobuyoshi Morizumi ,  Norio Kiuchi

IPC分类号： G11B5/33 ,  G11B5/31 ,  G11B21/21 ,  H01C7/00

CPC分类号： G11B5/3903 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/6005 ,  G11B5/6064 ,  H01C7/006

摘要： A thin-film resistor that has a stable electric resistance, the phase transformation to the α-phase being suppressed even in the high temperature environment, is provided. The thin-film resistor has a layered structure of: a base layer formed of a double-layered film in which an alloy film containing nickel and copper, an alloy film containing nickel and chromium or an alloy film containing copper and manganese is stacked on a tantalum film, or formed of a single alloy film containing nickel and chromium; and an electric resistance layer formed of a β-phase tantalum film or an alloy film mainly containing β-phase tantalum, and deposited on the base layer, the electric resistance layer having a crystal structure in which (002) plane of the β-phase crystal is most strongly oriented to the layer surface.

摘要翻译： 提供了具有稳定的电阻的薄膜电阻器，即使在高温环境中也抑制了对α相的相变。 该薄膜电阻器具有如下层状结构：将由镍和铜构成的合金膜，含有镍和铬的合金膜或含有铜和锰的合金膜的双层膜形成的基底层层叠在 或由含镍和铬的单一合金膜形成; 以及由β相钽膜或主要含有β相钽的合金膜形成并沉积在基底层上的电阻层，所述电阻层具有晶体结构，其中β相的（002）面 晶体最强烈地取向于层表面。

公开(公告)号：US20100078316A1

公开(公告)日：2010-04-01

申请号：US12241667

申请日：2008-09-30

申请人： Kento EDAKAWA ,  Hiromichi Umehara ,  Noriaki Kasahara ,  Michitaka Nishiyama

发明人： Kento EDAKAWA ,  Hiromichi Umehara ,  Noriaki Kasahara ,  Michitaka Nishiyama

IPC分类号： C25F3/02

CPC分类号： G11B5/1278 ,  G11B5/3163

摘要： The present invention relates to a method for forming a dry etching mask. A plurality of aluminum oxide films are sequentially sputtered on a material to be dry etched in such a manner that etching rate with respect to reactive ion etching increases toward a lower layer. On a laminated film of the plurality of aluminum oxide films, there is formed a first mask that has etching resistance with respect to the reactive ion etching. Reactive ion etching is performed from above the first mask to form a second mask of the laminated film.

摘要翻译： 本发明涉及一种形成干蚀刻掩模的方法。 将多个氧化铝膜依次溅射在待干蚀刻的材料上，使得相对于反应离子蚀刻的蚀刻速率向下层增加。 在多个氧化铝膜的层叠膜上形成有相对于反应离子蚀刻具有耐腐蚀性的第一掩模。 从第一掩模上方进行反应离子蚀刻，以形成层压膜的第二掩模。