公开(公告)号：US07456105B1

公开(公告)日：2008-11-25

申请号：US10321973

申请日：2002-12-17

申请人： Kevin Elliot Cooper ,  Jennifer Lynn Cooper ,  Janos Farkas ,  John C. Flake ,  Johannes Friedrich Groschopf ,  Yuri Solomentsev

发明人： Kevin Elliot Cooper ,  Jennifer Lynn Cooper ,  Janos Farkas ,  John C. Flake ,  Johannes Friedrich Groschopf ,  Yuri Solomentsev

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： This disclosure describes a low particle concentration formulation for slurry which is particularly useful in continuous CMP polishing of copper layers during semiconductor wafer manufacture. The slurry is characterized by particle concentrations generally less than 2 wt %, and advantageously less than 1 wt %. In particular embodiments, where the particle concentration is in a range of 50 to 450 PPM, an 8-fold increase in polishing rate over reactive liquid slurries has been realized. Slurries thus formulated also achieve a reduction in defectivity and in the variations in planarity from wafer to wafer during manufacture, by improving the stability of polishing quality. The slurry formulations permit substantial cost savings over traditional 2-component, reactive liquid and fixed/bonded abrasive slurries. In addition the formulations provides an advantageous way during CMP to easily change the selectivity or rate of removal of one film material vs. another. Yet another use is to provide slurry “pulsing” as a means to activate bonded abrasive or fixed abrasive slurry technology.

摘要翻译： 本公开内容描述了用于浆料的低颗粒浓度配方，其特别适用于半导体晶片制造过程中铜层的连续CMP抛光。 浆料的特征在于颗粒浓度通常小于2重量％，有利地小于1重量％。 在特定实施方案中，其中颗粒浓度在50至450PPM的范围内，抛光速率比反应性液体浆料高8倍。 因此，通过提高抛光质量的稳定性，由此制成的浆料也可以在制造过程中实现缺陷率的降低和从晶片到晶片的平面度的变化。 与传统的2组分反应性液体和固定/粘结的磨料浆料相比，浆料配方可节省大量成本。 此外，制剂在CMP期间提供有利的方式以容易地改变一种膜材料相对于另一种膜材料的选择性或速率。 另一种用途是提供浆料“脉冲”作为活化粘合磨料或固定磨料浆料技术的手段。