公开(公告)号：US20200276685A1

公开(公告)日：2020-09-03

申请号：US16800777

申请日：2020-02-25

申请人： Kevin H. Song ,  Benedict W. Pang

发明人： Kevin H. Song ,  Benedict W. Pang

IPC分类号： B24B37/005 ,  B24B37/22

摘要： A polishing pad for a chemical mechanical polishing apparatus includes a polishing layer having a polishing surface and a backing layer formed of a fluid-permeable material. The backing layer includes a lower surface configured to be secured to a platen and an upper surface secured to the polishing layer, wherein the lower surface and upper surface are sealed. A first seal circumferentially seals an edge of the backing layer, and a second seal seals and separates the backing layer into a first region and a second region surrounded by the first region.

公开(公告)号：US07199056B2

公开(公告)日：2007-04-03

申请号：US10360388

申请日：2003-02-06

申请人： Sen-Hou Ko ,  Kevin H. Song

发明人： Sen-Hou Ko ,  Kevin H. Song

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/7684

摘要： Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.

摘要翻译： 提供了用于将低凹陷平坦化基板表面的方法和组合物。 本发明的方面提供使用包含选自氧化铝和二氧化铈的研磨剂的组合物和用于底物的化学机械平面化以除去多晶硅的表面活性剂的方法。