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1.发明申请Single mask process for variable thickness dual damascene structures, other grey-masking processes, and structures made using grey-masking 审中-公开用于可变厚度双镶嵌结构，其他灰度掩蔽工艺和使用灰色掩蔽制成的结构的单掩模工艺公开(公告)号：US20070212872A1
公开(公告)日：2007-09-13
申请号：US11748269
申请日：2007-05-14
IPC分类号： H01L21/4763 , H01L21/266
CPC分类号： H01L21/31144 , G03F1/50 , H01L21/3083 , H01L21/32139 , H01L21/76807 , H01L21/76808 , H01L21/76816 , H01L21/76885 , H01L2221/1021
摘要： By using a multiple grey tone mask with at least two greys in semiconductor manufacture, multiple wiring thicknesses can now be made in a single level where previously only one wiring thickness could be provided. For example, power and signal wires of different thicknesses in a single layer can be provided.
摘要翻译： 通过在半导体制造中使用具有至少两个灰度的多灰度蒙版掩模，现在可以在单一级别中进行多个布线厚度，其中先前只能提供一个布线厚度。 例如，可以提供单层中不同厚度的功率和信号线。
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2.发明申请SINGLE MASK PROCESS FOR VARIABLE THICKNESS DUAL DAMASCENE STRUCTURES, OTHER GREY-MASKING PROCESSES, AND STRUCTURES MADE USING GREY-MASKING 审中-公开单一掩模过程，可变厚度双重DAMASCENE结构，其他灰色掩蔽过程和使用灰色掩蔽的结构公开(公告)号：US20060197228A1
公开(公告)日：2006-09-07
申请号：US10906752
申请日：2005-03-04
IPC分类号： H01L23/48
CPC分类号： H01L21/31144 , G03F1/50 , H01L21/3083 , H01L21/32139 , H01L21/76807 , H01L21/76808 , H01L21/76816 , H01L21/76885 , H01L2221/1021
摘要： By using a multiple grey tone mask with at least two greys in semiconductor manufacture, multiple wiring thicknesses can now be made in a single level where previously only one wiring thickness could be provided. For example, power and signal wires of different thicknesses in a single layer can be provided.
摘要翻译： 通过在半导体制造中使用具有至少两个灰度的多灰度蒙版掩模，现在可以在单一级别中进行多个布线厚度，其中先前只能提供一个布线厚度。 例如，可以提供单层中不同厚度的功率和信号线。
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