公开(公告)号：US20050180859A1

公开(公告)日：2005-08-18

申请号：US10516581

申请日：2003-04-30

Applicant: Ki-Man Lee ,  Whan-Sun Lee ,  Myung-Sun Kwak ,  Ki-Won Lee

Inventor： Ki-Man Lee ,  Whan-Sun Lee ,  Myung-Sun Kwak ,  Ki-Won Lee

IPC: F04C18/32 ,  F04C2/32 ,  F04C2/352 ,  F04C11/00 ,  F04B25/00

CPC classification number: F04C2/32 ,  F04C2/352 ,  F04C11/001

Abstract: Disclosed is a four-in pump which includes: a gear box (21) being arranged between a first and a second cylinder blocks (100 and 200), a gearing means (1) arranged within the gearbox (21) being connected with a driving shaft (13) of a motor (11), four eccentric shafts ES1 through ES4 being mounted for possibly performing eccentric rotational motion, on the gearing means (1), respectively, four pistons (120, 160, 220, 260) respectively mounted on the eccentric shafts ES1 through ES4 being arranged on an upper and a lower volume chambers (110 and 150) of the first cylinder block (100) and on an upper and a lower volume chambers (210 and 250) of the second cylinder block (200), respectively.

Abstract translation: 公开了一种四入泵，其包括：齿轮箱（21），布置在第一和第二气缸体（100和200）之间，齿轮箱（1）布置在齿轮箱（21）内，与驱动 电动机（11）的轴（13），四个偏心轴ES1至ES4分别安装在齿轮传动装置（1）上，用于可能执行偏心旋转运动，四个活塞（120,160,220,260） 安装在偏心轴ES 1至ES 4上，该偏心轴ES 1至ES 4设置在第一气缸体（100）的上部和下部容积室（110和150）上以及第二气缸体的上部和下部容积室（210和250） 气缸体（200）。

公开(公告)号：US20160099177A1

公开(公告)日：2016-04-07

申请号：US14701859

申请日：2015-05-01

Applicant: Bum-Joon YOUN ,  Tae-Sun KIM ,  Yeo-Jin LEE ,  Yu-Ra KIM ,  Jin-Man KIM ,  Jae-Kyung SEO ,  Ki-Man LEE

Inventor： Bum-Joon YOUN ,  Tae-Sun KIM ,  Yeo-Jin LEE ,  Yu-Ra KIM ,  Jin-Man KIM ,  Jae-Kyung SEO ,  Ki-Man LEE

IPC: H01L21/8234 ,  H01L21/266 ,  H01L29/66 ,  H01L21/762 ,  H01L21/027 ,  H01L21/265

CPC classification number: H01L21/823431 ,  H01L21/26513 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract translation: 在一种方法中，在衬底上形成隔离层图案以限定第一和第二活性鳍片。 在隔离层图案上形成ARC层，以至少部分地覆盖第一和第二活性鳍片的侧壁。 ARC层的顶表面的水平等于或小于等于或大于第一和第二活性翅片的一半的水平。 在第一和第二活性鳍片和ARC层上形成光致抗蚀剂层。 去除光致抗蚀剂层的一部分以形成覆盖第一活性鳍片并暴露第二活性鳍片的光致抗蚀剂图案。 除去光致抗蚀剂层去除部分之下的ARC层的一部分以形成ARC层图案。 将杂质植入暴露的第二活性鳍中以形成杂质区。

公开(公告)号：US09379019B2

公开(公告)日：2016-06-28

申请号：US14701859

申请日：2015-05-01

Applicant: Bum-Joon Youn ,  Tae-Sun Kim ,  Yeo-Jin Lee ,  Yu-Ra Kim ,  Jin-Man Kim ,  Jae-Kyung Seo ,  Ki-Man Lee

Inventor： Bum-Joon Youn ,  Tae-Sun Kim ,  Yeo-Jin Lee ,  Yu-Ra Kim ,  Jin-Man Kim ,  Jae-Kyung Seo ,  Ki-Man Lee

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/027 ,  H01L21/265 ,  H01L29/66 ,  H01L21/762 ,  H01L21/266

CPC classification number: H01L21/823431 ,  H01L21/26513 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract translation: 在一种方法中，在衬底上形成隔离层图案以限定第一和第二活性鳍片。 在隔离层图案上形成ARC层，以至少部分地覆盖第一和第二活性鳍片的侧壁。 ARC层的顶表面的水平等于或小于等于或大于第一和第二活性翅片的一半的水平。 在第一和第二活性鳍片和ARC层上形成光致抗蚀剂层。 去除光致抗蚀剂层的一部分以形成覆盖第一活性鳍片并暴露第二活性鳍片的光致抗蚀剂图案。 除去光致抗蚀剂层去除部分之下的ARC层的一部分以形成ARC层图案。 将杂质植入暴露的第二活性鳍中以形成杂质区。