Programmable DCVS logic circuits
    1.
    发明授权
    Programmable DCVS logic circuits 失效
    可编程DCVS逻辑电路

    公开(公告)号:US5166547A

    公开(公告)日:1992-11-24

    申请号:US711487

    申请日:1991-06-05

    摘要: A basic tree construction, from which differential cascode voltage switch (DCVS) circuits having variable logic personality can be formed, contains n (>2) rows of differentially associated semiconductor device pairs spanned by n pairs of complementary input conductor leads, and a load circuit coupled to drain terminals of devices in the nth row. The nth row contains 2 device pairs and each other row contains 2.sup.i-1 device pairs (i=1, 2, . . . , n-1). Connections between source and drain terminals of devices in successive rows are predefined from the 1st to the n-1st row and variably definable between the n-1st and nth rows. Connections between input conductors and device gate terminals are predefined in each row other than the nth row, and variably definable in the nth row. Upon selectively defining a set of variable connections relative to the n-1st and nth rows the logic personality of the tree is selected to conform to any one of all possible functions of n variables. Logic function personalization is established in one embodiment by altering materials at discrete points in a space between n-1st and nth rows. In another embodiment, personalization is established by altering signals stored by latch devices in the space between the n-1st and nth rows which control gating device adjacently positioned to form conductive connections corresponding to those formed by altering materials in the first embodiment.

    摘要翻译: 可以形成具有可变逻辑特性的差分共源共栅电压开关(DCVS)电路的基本树结构包含由n对互补输入导体引线跨越的n(> 2)个由差分相关的半导体器件对构成的行,负载电路 耦合到第n行的器件的漏极端子。 第n行包含2个设备对,每行包含2i-1个设备对(i = 1,2,...,n-1)。 在连续行中的设备的源极和漏极端子之间的连接从第一行到第n行预定义,并且可以在第n-1行和第n行之间可变地定义。 输入导体和器件栅极端子之间的连接在除第n行以外的每行中预定义,并且在第n行中可变地定义。 在选择性地定义相对于第n-1和n行的一组可变连接时,选择树的逻辑个性以符合n个变量的所有可能函数中的任何一个。 在一个实施例中通过在第n-1和第n行之间的空间中的离散点处改变材料来建立逻辑功能个性化。 在另一个实施例中,通过在第n-1行和第n行之间的空间中改变由锁存装置存储的信号来建立个性化,所述信号控制门控装置相邻定位以形成对应于在第一实施例中通过改变材料形成的导电连接的导电连接。