公开(公告)号：US3950738A

公开(公告)日：1976-04-13

申请号：US487963

申请日：1974-07-12

申请人： Yutaka Hayashi ,  Kiyoko Nagai ,  Yasuo Tarui

发明人： Yutaka Hayashi ,  Kiyoko Nagai ,  Yasuo Tarui

IPC分类号： H01L31/12 ,  G11C11/42 ,  G11C16/04 ,  H01L21/8247 ,  H01L27/146 ,  H01L29/788 ,  H01L29/792 ,  H01L31/00 ,  H01L31/02

CPC分类号： H01L29/792 ,  G11C11/42 ,  G11C16/0408 ,  H01L27/14643 ,  H01L31/00 ,  H01L2224/48472 ,  H01L2924/01014 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/14

摘要： A semiconductor non-volatile optical memory device is constructed by providing light-permeable charge retention means in an insulating layer on a first semiconductor surface into which photo-generated carriers in the surface of the first semiconductor region are injected over the semiconductor-insulator potential barrier by applying reverse bias between the first semiconductor region and a second region forming a rectifying junction with the first semiconductor region. Also disclosed in a non-volatile memory integrated circuit employing one or more of said devices together with light source in the same package. The non-volatile memory integrated circuit operates under low bias voltage and is compatible with a high speed integrated logic circuits.