Liquid crystal panel and pixel structure thereof

    公开(公告)号:US08643031B2

    公开(公告)日:2014-02-04

    申请号:US13329623

    申请日:2011-12-19

    IPC分类号: H01L33/00

    摘要: There is provided a pixel structure of a liquid crystal panel including a transparent substrate, and a gate line, a data line, a switching transistor, a first electrode, a second electrode and a shield layer formed on the transparent substrate. The gate line is substantially perpendicular to the data line. The switching transistor is located adjacent to a crossing point of the gate line and the data line, and is configured to input a display voltage of the data line to the second electrode according to the control of the gate line. The first electrode and the second electrode are arranged in such a way that the display voltage forms a transverse electric field between the first electrode and the second electrode. The shield layer overlaps at least a part of the gate and is electrically isolated from the first electrode and the second electrode.

    PIXEL STRUCTURE AND DISPLAY APPARATUS
    3.
    发明申请
    PIXEL STRUCTURE AND DISPLAY APPARATUS 审中-公开
    像素结构和显示设备

    公开(公告)号:US20130176514A1

    公开(公告)日:2013-07-11

    申请号:US13552675

    申请日:2012-07-19

    IPC分类号: G02F1/136

    摘要: The present invention provides a pixel structure of a display apparatus. The pixel structure is disposed on a substrate of the display apparatus. The pixel structure comprises pixel electrode and at least one switching element electrically connected to the pixel electrode. The switching element comprises a first electrode including an opening, and a second electrode including a bend extension portion, wherein the bend extension portion extends into the opening of the first electrode. The present invention can improve the problems existing in a conventional optically compensated birefringence (OCB) mode liquid crystal display.

    摘要翻译: 本发明提供一种显示装置的像素结构。 像素结构设置在显示装置的基板上。 像素结构包括像素电极和电连接到像素电极的至少一个开关元件。 开关元件包括包括开口的第一电极和包括弯曲延伸部分的第二电极,其中弯曲延伸部分延伸到第一电极的开口中。 本发明可以改善常规光学补偿双折射(OCB)模式液晶显示器中存在的问题。

    Display panel with shield layer partially over gate line
    4.
    发明授权
    Display panel with shield layer partially over gate line 有权
    屏蔽层部分覆盖栅极线的显示面板

    公开(公告)号:US09029876B2

    公开(公告)日:2015-05-12

    申请号:US13329623

    申请日:2011-12-19

    摘要: There is provided a pixel structure of a liquid crystal panel including a transparent substrate, and a gate line, a data line, a switching transistor, a first electrode, a second electrode and a shield layer formed on the transparent substrate. The gate line is substantially perpendicular to the data line. The switching transistor is located adjacent to a crossing point of the gate line and the data line, and is configured to input a display voltage of the data line to the second electrode according to the control of the gate line. The first electrode and the second electrode are arranged in such a way that the display voltage forms a transverse electric field between the first electrode and the second electrode. The shield layer overlaps at least a part of the gate and is electrically isolated from the first electrode and the second electrode.

    摘要翻译: 提供了一种包括透明基板的液晶面板的像素结构,以及形成在透明基板上的栅极线,数据线,开关晶体管,第一电极,第二电极和屏蔽层。 栅极线基本上垂直于数据线。 开关晶体管位于栅极线和数据线的交叉点附近,并且被配置为根据栅极线的控制将数据线的显示电压输入到第二电极。 第一电极和第二电极被布置成使得显示电压在第一电极和第二电极之间形成横向电场。 屏蔽层与栅极的至少一部分重叠,并与第一电极和第二电极电隔离。

    Pixel structure, method of manufacturing pixel structure, and active device matrix substrate
    5.
    发明授权
    Pixel structure, method of manufacturing pixel structure, and active device matrix substrate 有权
    像素结构,像素结构制造方法和有源器件矩阵衬底

    公开(公告)号:US08796688B2

    公开(公告)日:2014-08-05

    申请号:US13592347

    申请日:2012-08-23

    IPC分类号: H01L29/04

    CPC分类号: H01L27/1255 H01L28/86

    摘要: A pixel structure, a method of manufacturing the pixel structure, and an active device matrix substrate are provided. The pixel structure includes a first patterned metal layer having a common line and a gate; a first insulation layer; a semiconductor pattern; a second patterned metal layer having a source and a drain both electrically connected to the semiconductor pattern; a second insulation layer having a contact opening exposing the drain; and an electrode layer having a common electrode, and a pixel electrode connected to the drain through the contact opening. The common line, the first insulation layer, and the pixel electrode constitute a first storage capacitor. The common line, the drain, and the common electrode constitute a sandwich structure. The common line, the first insulation layer, and the drain constitute a second storage capacitor. The drain, the second insulation layer, and the common electrode constitute a third storage capacitor.

    摘要翻译: 提供像素结构,制造像素结构的方法和有源器件矩阵基板。 像素结构包括具有公共线和栅极的第一图案化金属层; 第一绝缘层; 半导体图案; 具有电连接到半导体图案的源极和漏极的第二图案化金属层; 第二绝缘层,具有暴露漏极的接触开口; 以及具有公共电极的电极层和通过接触开口连接到漏极的像素电极。 公共线,第一绝缘层和像素电极构成第一存储电容器。 公共线,漏极和公共电极构成夹层结构。 公共线,第一绝缘层和漏极构成第二存储电容器。 漏极,第二绝缘层和公共电极构成第三存储电容器。

    PIXEL STRUCTURE, METHOD OF MANUFACTURING PIXEL STRUCTURE, AND ACTIVE DEVICE MATRIX SUBSTRATE
    6.
    发明申请
    PIXEL STRUCTURE, METHOD OF MANUFACTURING PIXEL STRUCTURE, AND ACTIVE DEVICE MATRIX SUBSTRATE 有权
    像素结构,制造像素结构的方法和主动器件矩阵衬底

    公开(公告)号:US20130328052A1

    公开(公告)日:2013-12-12

    申请号:US13592347

    申请日:2012-08-23

    IPC分类号: H01L33/36 H01L29/786

    CPC分类号: H01L27/1255 H01L28/86

    摘要: A pixel structure, a method of manufacturing the pixel structure, and an active device matrix substrate are provided. The pixel structure includes a first patterned metal layer having a common line and a gate; a first insulation layer; a semiconductor pattern; a second patterned metal layer having a source and a drain both electrically connected to the semiconductor pattern; a second insulation layer having a contact opening exposing the drain; and an electrode layer having a common electrode, and a pixel electrode connected to the drain through the contact opening. The common line, the first insulation layer, and the pixel electrode constitute a first storage capacitor. The common line, the drain, and the common electrode constitute a sandwich structure.The common line, the first insulation layer, and the drain constitute a second storage capacitor. The drain, the second insulation layer, and the common electrode constitute a third storage capacitor.

    摘要翻译: 提供像素结构,制造像素结构的方法和有源器件矩阵基板。 像素结构包括具有公共线和栅极的第一图案化金属层; 第一绝缘层; 半导体图案; 具有电连接到半导体图案的源极和漏极的第二图案化金属层; 第二绝缘层,具有暴露漏极的接触开口; 以及具有公共电极的电极层和通过接触开口连接到漏极的像素电极。 公共线,第一绝缘层和像素电极构成第一存储电容器。 公共线,漏极和公共电极构成夹层结构。 公共线,第一绝缘层和漏极构成第二存储电容器。 漏极,第二绝缘层和公共电极构成第三存储电容器。