公开(公告)号：US08059080B2

公开(公告)日：2011-11-15

申请号：US11945129

申请日：2007-11-26

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Kohichiro Adachi ,  Masayuki Nakano

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Kohichiro Adachi ,  Masayuki Nakano

IPC分类号： G09G3/34

CPC分类号： H01L27/1203 ,  G02F1/13454 ,  G09G3/3648 ,  G09G2300/0408 ,  H01L21/28282 ,  H01L21/84

摘要： To provide a semiconductor storage unit that has a simple structure requiring only a small number of processes to produce, and is provided with a gate insulating film having a memory function. The semiconductor storage unit has a semiconductor layer, two diffusion layer regions forming a source region and a drain region, which are formed on the semiconductor layer, a channel region fixed between the two diffusion layer regions, a gate insulating film that is formed on the channel region, and made of a silicon oxide film containing carbon atoms of 0.1 to 5.0 atomic percent, and a gate electrode formed on the gate insulating film.

摘要翻译： 提供具有仅需要少量工艺制造的简单结构的半导体存储单元，并且设置有具有记忆功能的栅极绝缘膜。 半导体存储单元具有半导体层，形成在半导体层上的源极区和漏极区的两个扩散层区域，固定在两个扩散层区域之间的沟道区域，形成在栅极绝缘膜上的栅极绝缘膜 沟道区域，由碳原子数为0.1〜5.0原子％的氧化硅膜构成，栅极形成在栅极绝缘膜上。

公开(公告)号：US20080136757A1

公开(公告)日：2008-06-12

申请号：US11945129

申请日：2007-11-26

申请人： Hiroshi Iwata ,  Akihide Shibata ,  Kohichiro Adachi ,  Masayuki Nakano

发明人： Hiroshi Iwata ,  Akihide Shibata ,  Kohichiro Adachi ,  Masayuki Nakano

IPC分类号： G09G3/36 ,  H01L29/792

CPC分类号： H01L27/1203 ,  G02F1/13454 ,  G09G3/3648 ,  G09G2300/0408 ,  H01L21/28282 ,  H01L21/84

摘要： To provide a semiconductor storage unit that has a simple structure requiring only a small number of processes to produce, and is provided with a gate insulating film having a memory function. The semiconductor storage unit has a semiconductor layer, two diffusion layer regions forming a source region and a drain region, which are formed on the semiconductor layer, a channel region fixed between the two diffusion layer regions, a gate insulating film that is formed on the channel region, and made of a silicon oxide film containing carbon atoms of 0.1 to 5.0 atomic percent, and a gate electrode formed on the gate insulating film.

摘要翻译： 提供具有仅需要少量工艺制造的简单结构的半导体存储单元，并且设置有具有记忆功能的栅极绝缘膜。 半导体存储单元具有半导体层，形成在半导体层上的源极区和漏极区的两个扩散层区域，固定在两个扩散层区域之间的沟道区域，形成在栅极绝缘膜上的栅极绝缘膜 沟道区域，由碳原子数为0.1〜5.0原子％的氧化硅膜构成，栅极形成在栅极绝缘膜上。