公开(公告)号：US20070082427A1

公开(公告)日：2007-04-12

申请号：US11472324

申请日：2006-06-22

申请人： Takeo Shirahama ,  Shinichi Miyakuni ,  Toshiaki Kitano ,  Takahiro Iino ,  Kouichirou Nishizawa

发明人： Takeo Shirahama ,  Shinichi Miyakuni ,  Toshiaki Kitano ,  Takahiro Iino ,  Kouichirou Nishizawa

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/469

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L2221/68345

摘要： In a method for manufacturing a compound semiconductor device, a principal surface of a SiC wafer, on which a compound semiconductor device is located, is bonded to a support substrate with an adhesive having a softening point higher than 200° C. A via hole is formed dry etching, including supplying a fluorine-containing etching gas to a rear side of the SiC wafer. Thereafter, the support substrate and the adhesive are removed. Preferably, the adhesive is formed by reacting one material coating the principal surface of the SiC wafer, and another material coating the support substrate.

摘要翻译： 在化合物半导体器件的制造方法中，将化合物半导体器件所位于的SiC晶片的主面用软化点高于200℃的粘合剂与支撑基板接合。通孔为 形成干蚀刻，包括向SiC晶片的后侧供给含氟蚀刻气体。 此后，除去支撑基板和粘合剂。 优选地，粘合剂通过使涂覆在SiC晶片的主表面上的一种材料和涂覆在支撑衬底上的另一种材料反应而形成。