公开(公告)号：US20050076944A1

公开(公告)日：2005-04-14

申请号：US10931295

申请日：2004-08-31

申请人： Mercouri Kanatzidis ,  Kuei-Fang Hsu

发明人： Mercouri Kanatzidis ,  Kuei-Fang Hsu

IPC分类号： H01L35/14 ,  H01L35/16 ,  H01L37/00

CPC分类号： H01L35/16

摘要： A thermoelectric composition comprises a material represented by the general formula (AgaX1−a)1±x(SnbPb1−b)mM′1−yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M′ is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ≦1; x and y are independently >0 and

摘要翻译： 热电组合物包含由通式（AgaX1-a）1±x（SnbPb1-b）mM'1-yQ2 + m表示的材料，其中X是Na，K，或任何比例的Na和K的组合; M'是选自Sb，Bi，镧系元素及其组合的三价元素; Q是选自S，Te，Se及其组合的硫属元素元素; a和b独立地> 0和<= 1; x和y独立地> 0和<1; 和2 <= m <= 30。 组合物表现出高达约1.4或更高的品质因数ZT，并且可用作热电装置中的p型半导体。

公开(公告)号：US08481843B2

公开(公告)日：2013-07-09

申请号：US10931295

申请日：2004-08-31

申请人： Mercouri G. Kanatzidis ,  Kuei-Fang Hsu

发明人： Mercouri G. Kanatzidis ,  Kuei-Fang Hsu

IPC分类号： H01L37/00 ,  H01L35/30

CPC分类号： H01L35/16

摘要： A thermoelectric composition comprises a material represented by the general formula (AgaX1−a)1±x(SnbPb1−b)mM′1−yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M′ is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ≦1; x and y are independently >0 and

摘要翻译： 热电组合物包含由通式（AgaX1-a）1±x（SnbPb1-b）mM'1-yQ2 + m表示的材料，其中X是Na，K，或任何比例的Na和K的组合; M'是选自Sb，Bi，镧系元素及其组合的三价元素; Q是选自S，Te，Se及其组合的硫属元素元素; a和b独立地> 0和@ 1; x和y独立地> 0和<1; 和2 @ m @ 30。 组合物表现出高达约1.4或更高的品质因数ZT，并且可用作热电装置中的p型半导体。

公开(公告)号：US07592535B2

公开(公告)日：2009-09-22

申请号：US10571338

申请日：2004-08-25

申请人： Mercouri Kanatzidis ,  Kuei-Fang Hsu

发明人： Mercouri Kanatzidis ,  Kuei-Fang Hsu

IPC分类号： H01L37/00 ,  H01L35/30

CPC分类号： H01L35/20 ,  H01L35/14 ,  H01L35/16 ,  H01L35/30

摘要： A thermoelectric material of the general formula Ag1−XMmM′Q2+m, wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M′ is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8≦m≦24; and 0.01≦x≦0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M′, and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.

摘要翻译： 通式为Ag1-XMmM'Q2 + m的热电材料，其中M选自Pb，Sn，Ca，Sr，Ba，二价过渡金属及其组合; M'选自Bi，Sb及其组合; Q选自Se，Te，S及其组合; 8 <= m <= 24; 和0.01 <= x <= 0.7。 在本发明的实施方案中，组合物显示n型半导体性质。 在优选的实施方案中，x为0.1至0.3，m为10至18.可通过向反应容器中加入化学计量量的包含Ag，M，M'和Q的起始材料来合成组合物，加热原料 达到足以熔化材料的温度和一段时间，并以受控的冷却速度冷却反应产物。

公开(公告)号：US20070107764A1

公开(公告)日：2007-05-17

申请号：US10571338

申请日：2004-08-25

申请人： Mercouri Kanatzidis ,  Kuei-Fang Hsu

发明人： Mercouri Kanatzidis ,  Kuei-Fang Hsu

IPC分类号： H01L35/30

CPC分类号： H01L35/20 ,  H01L35/14 ,  H01L35/16 ,  H01L35/30

摘要： A thermoelectric material of the general formula Ag1-XMmM′Q2+m, wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M′ is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8≦m≦24; and 0.01≦x ≦0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M′, and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.

摘要翻译： 一种通式为Ag 1-X M m Q 2 + m + 2的热电材料，其中M选自 Pb，Sn，Ca，Sr，Ba，二价过渡金属及其组合; M'选自Bi，Sb及其组合; Q选自Se，Te，S及其组合; 8 <= m <= 24; 和0.01 <= x <= 0.7。 在本发明的实施方案中，组合物显示n型半导体性质。 在优选的实施方案中，x为0.1至0.3，m为10至18.可通过向反应容器中加入化学计量量的包含Ag，M，M'和Q的起始材料来合成组合物，加热原料 达到足以熔化材料的温度和一段时间，并以受控的冷却速度冷却反应产物。