公开(公告)号：US06329106B1

公开(公告)日：2001-12-11

申请号：US09393868

申请日：1999-09-10

Applicant: Sang Man Bae ,  Yong Chul Shin ,  Young Mo Koo ,  Kwang Yoon Koh ,  Bong Ho Kim ,  Dong Jun Ahn

Inventor： Sang Man Bae ,  Yong Chul Shin ,  Young Mo Koo ,  Kwang Yoon Koh ,  Bong Ho Kim ,  Dong Jun Ahn

IPC: G03F900

CPC classification number: G03F1/32 ,  G03F1/74

Abstract: The present invention is directed to prevent generating repair by-products during a repair process of a phase shift mask, and defects on a quartz substrate. According to the present invention, a repair method for phase shift mask in a semiconductor device so as to remove a bridge formed between a phase shift layer on a quartz substrate, comprises the steps of: first repairing the bridge by implanting a charging ion according to a focused ion beam(“FIB”) method; and second repairing the first repaired bridge portion by emitting laser and then removing the bridge.

Abstract translation: 本发明旨在防止在相移掩模的修复过程中产生修复副产物，并且在石英衬底上产生缺陷。根据本发明，一种用于半导体器件中的相移掩模的修复方法，以便去除 形成在石英衬底上的相移层之间的桥包括以下步骤：首先通过根据聚焦离子束（“FIB”）方法注入充电离子来修复桥; 并且通过发射激光器然后去除桥接件来修复第一修复的桥接部分。