Abstract:
A method for fabricating a semiconductor device includes forming a target etch layer over a substrate, a first auxiliary layer over the target etch layer, an isolation layer over the first auxiliary layer, and a second auxiliary layer over the isolation layer. A first exposure process is performed, where the first auxiliary layer is in focus and the second auxiliary layer is out of focus. A second exposure process is performed, where the second auxiliary layer in focus and the first auxiliary layer is out of focus. The second auxiliary layer is developed to form first mask patterns. The isolation layer and the first auxiliary layer are etched by using the first mask patterns to form second mask patterns. The second mask patterns are developed to form third mask patterns that are used to facilitate subsequent etching of the target etch layer.
Abstract:
In a mail sorting system 10, output pixel intensities of an optical scanner 18 have their contrast locally enhanced. A contrast enhancer 24 uses statistical methods (averaging, standard deviation) coupled with empirical stretch and offset data stored in a ROM 25, to enhance pixel contrast in a pipelined processing operation.
Abstract:
A semiconductor device includes a first line pattern and a second line pattern formed in parallel on a semiconductor substrate, third line patterns formed in parallel between the first line pattern and the second line pattern, fourth line patterns formed in parallel between the first line pattern and the second line pattern, a first connection structure configured to couple a first of the third line patterns with a first of the fourth lines patterns, which are adjacent to the first line pattern, and a second connection structure configured to couple a second of the first lines patterns with a second of the fourth lines patterns, which are adjacent to the second line pattern.
Abstract:
A method of forming metal wirings of a nonvolatile memory device include forming a first insulating layer over a semiconductor substrate including a first junction area and a second junction area, forming first and second contact holes through which the first and second junction areas are respectively exposed in the first insulating layer, forming first and second contact plugs within the first and second contact holes, etching a part of the second contact plug, thus forming a recess, forming a second insulating layer to fill the recess, forming a third insulating layer over the semiconductor substrate including the first and second insulating layers, forming a first trench through which the first contact plug is exposed a second trench through which the second contact plug is exposed by etching the third insulating layer, and forming first and second metal wirings within the first and second trenches, respectively.
Abstract:
A method for evolving a polypeptide or a polynucleotide coding therefor, which comprises preparing a library of mutant polynucleotides through transposon-mediated random substitution, insertion or deletion of a multiple of three nucleotides on a polynucleotide coding for a target protein, expressing the mutant polynucleotides in a host cell and screening for a polypeptide having a desired property.
Abstract:
The present invention is directed to prevent generating repair by-products during a repair process of a phase shift mask, and defects on a quartz substrate. According to the present invention, a repair method for phase shift mask in a semiconductor device so as to remove a bridge formed between a phase shift layer on a quartz substrate, comprises the steps of: first repairing the bridge by implanting a charging ion according to a focused ion beam(“FIB”) method; and second repairing the first repaired bridge portion by emitting laser and then removing the bridge.
Abstract:
An analog synapse circuit for an artificial neural network requiring less circuitry and interconnections than prior synapses, while affording better weight programming means uses two complementary floating-gate MOSFETs with tunneling injection in an inverter configuration, with each MOSFET storing a weight value. This weight value is set by storing a charge injected by Fowler-Nordheim tunneling, or other tunneling means, into the floating-gate, which shifts the threshold voltage of the device. A programming line applies a current pulse to the MOSFET floating gate to write or erase this stored charge, thereby adjusting the weight of the MOSFET. The two MOSFETs are connected with the gate electrodes connected together and the drain electrodes connected together to provide a common gate and common drain between the two MOSFETs. An input line is connected to the common gate, and an output line is connected to the common drain. The source electrodes of each MOSFET are connected to reference voltages. The synapse circuit may be used in either a feedforword or feedback network, and may be expanded from two to four quadrant operation. The synapse provides a single output current line which represents a function of the input voltage and the stored weights. A plurality of such synapses may be configured in a network, wherein the output lines of each synapse are connected at a current summing node at the input of a neuron. An active load in the input of the neuron allows for both excitatory and inhibitory output current from the synapse circuit.
Abstract:
A digital data memory unit and memory unit array, each unit of which can be searched in accordance with the contents thereof and updated, utilizes a digital storage element in the form of a register, latch, or memory cell, a comparator and control logic. Data is presented to the units in parallel on data lines and compare data is supplied in parallel to the units along other data lines. Parallel search of data in each unit, with multiple updates in units where the stored data matches the compare data, occurs rapidly and in one clock cycle (e.g., approximately 50 nanoseconds). The control logic responds to a match output from the comparator and an update enable pulse to enable a new data word on the data lines to be written into the digital storage element of the unit. The memory unit array is useful in image processing for storing pixel values and searching and updating these values in the process of image analysis to recognize certain images.
Abstract:
The present invention relates to a composition for the prevention or treatment lipid metabolic disorders comprising fucoxanthin or marine plant extract comtaining the same as an effective indredients. Fucoxanthin or a marine plant extract comprising the same is effective in reducing weight increase and reducing triglyceride and cholesterol level in liver tissue, or plasma through inhibiting the synthesis of fatty acid and promoting the oxidation of fatty acid. Therefore, the composition comprising fucoxanthin or a marine plant extract comprising the same as an effective ingredient may be effectively used for the prevention and treatment of lipid metabolic disorders.
Abstract:
A neural network provides both linearly separable and non-linearly separable logic operations, including the exclusive-or operation, on input signals in a single layer of circuits. The circuit weights the input signals with complex weights by multiplication and addition, and provides weighted signals to a neuron circuit (a neuron body or soma) which provides an output corresponding to the desired logical operation.