公开(公告)号：US20160293545A1

公开(公告)日：2016-10-06

申请号：US15053182

申请日：2016-02-25

申请人： Changseop YOON ,  Kwangsub YOON ,  Jongmil YOUN ,  Hyung Jong LEE

发明人： Changseop YOON ,  Kwangsub YOON ,  Jongmil YOUN ,  Hyung Jong LEE

IPC分类号： H01L23/528 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06

CPC分类号： H01L23/5283 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L29/0653

摘要： A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.

摘要翻译： 半导体器件包括包括PMOSFET和NMOSFET区域的衬底，第一栅极结构，其在第一方向上延伸并且与PMOSFET和NMOSFET区域交叉，以及在第一栅极结构上并连接到第一栅极结构的栅极接触，栅极接触位于PMOSFET和 NMOSFET区域，栅极接触包括与第一栅极结构的顶表面接触的第一子接触，第一子接触包括沿着第一栅极结构的一个侧壁向衬底垂直延伸的垂直延伸部分，以及第二子 接触件与第一栅极结构间隔开，第二子接触件的顶表面定位在与第一子接触件的顶表面相同的高度。