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    Semiconductor Devices and Methods for Manufacturing the Same
    2.
    发明申请
    Semiconductor Devices and Methods for Manufacturing the Same 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20160293608A1

    公开(公告)日：2016-10-06

    申请号：US15086660

    申请日：2016-03-31

    申请人： Changseop Yoon

    发明人： Changseop Yoon

    IPC分类号： H01L27/11 ,  H01L23/535

    摘要： A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active patterns, first and second source/drain regions on the first and second active patterns, respectively, at one side of the first gate electrode, and an active contact on the first source/drain region so as to be electrically connected to the first source/drain region. The active contact includes a first sub-contact and a second sub-contact. The second sub-contact includes a vertical extension vertically extending toward the substrate. A bottom surface of the vertical extension is lower than a bottom surface of the first sub-contact.

    摘要翻译： 半导体器件包括其上包括第一和第二有源图案的衬底，与第一和第二有源图案相交的第一栅极电极，分别在第一和第二有源图案的第一侧上的第一和第二有源图案上的第一和第二源极/漏极区域 电极和第一源极/漏极区域上的有源触点，以便电连接到第一源极/漏极区域。 有源触点包括第一子触点和第二子触点。 第二子接触包括垂直延伸朝向基板的垂直延伸。 垂直延伸部的底面低于第一副接触面的底面。

    SEMICONDUCTOR DEVICES INCLUDING GATE CONTACTS
    3.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING GATE CONTACTS 有权
    包括门控触点的半导体器件

    公开(公告)号：US20160284799A1

    公开(公告)日：2016-09-29

    申请号：US15055666

    申请日：2016-02-29

    申请人： Changseop Yoon ,  Hyokki Kwon ,  Min Choul Kim

    发明人： Changseop Yoon ,  Hyokki Kwon ,  Min Choul Kim

    IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/45 ,  H01L27/092

    CPC分类号： H01L29/0653 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/41791 ,  H01L29/45

    摘要： A semiconductor device includes a substrate. The semiconductor device includes a gate electrode on the substrate. The semiconductor device includes a gate contact on the gate electrode. In some embodiments, a fin-shaped body protrudes from the substrate, and the gate electrode is on the fin-shaped body. Moreover, in some embodiments, the gate contact is partially in the gate electrode.

    摘要翻译： 半导体器件包括衬底。 该半导体器件包括在该衬底上的栅电极。 半导体器件包括在栅电极上的栅极接触。 在一些实施例中，鳍状体从衬底突出，并且栅电极在鳍状体上。 此外，在一些实施例中，栅极接触部分地在栅电极中。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160284697A1

    公开(公告)日：2016-09-29

    申请号：US15053262

    申请日：2016-02-25

    申请人： Changseop YOON ,  Jayeol GOO ,  Sang Gil KIM

    发明人： Changseop YOON ,  Jayeol GOO ,  Sang Gil KIM

    IPC分类号： H01L27/088 ,  H01L29/08

    CPC分类号： H01L27/088 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823475 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/4238 ,  H01L29/7848

    摘要： A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.

    摘要翻译： 半导体器件包括从衬底突出的多个有源图案，与多个有源图案相交的栅极结构，分别在栅极结构的相对侧的多个有源图案上的多个源极/漏极区域，以及源极/漏极 触点与多个有源图形相交，每个源极/漏极触点共同连接到其下面的源极/漏极区域，多个源极/漏极区域中的每个源极/漏极区域包括与其下方的有源图案的顶表面接触的第一部分 第一部分具有随着离开衬底的距离而显着增加的宽度增加，并且从第一部分延伸的第二部分具有与衬底的距离基本上减小的宽度增加，源极/漏极的底表面 触点低于第一和第二部分之间的界面。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160293545A1

    公开(公告)日：2016-10-06

    申请号：US15053182

    申请日：2016-02-25

    申请人： Changseop YOON ,  Kwangsub YOON ,  Jongmil YOUN ,  Hyung Jong LEE

    发明人： Changseop YOON ,  Kwangsub YOON ,  Jongmil YOUN ,  Hyung Jong LEE

    IPC分类号： H01L23/528 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06

    CPC分类号： H01L23/5283 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/0207 ,  H01L29/0653

    摘要： A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.

    摘要翻译： 半导体器件包括包括PMOSFET和NMOSFET区域的衬底，第一栅极结构，其在第一方向上延伸并且与PMOSFET和NMOSFET区域交叉，以及在第一栅极结构上并连接到第一栅极结构的栅极接触，栅极接触位于PMOSFET和 NMOSFET区域，栅极接触包括与第一栅极结构的顶表面接触的第一子接触，第一子接触包括沿着第一栅极结构的一个侧壁向衬底垂直延伸的垂直延伸部分，以及第二子 接触件与第一栅极结构间隔开，第二子接触件的顶表面定位在与第一子接触件的顶表面相同的高度。

    SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS
    7.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS 有权
    包括场效应晶体管的半导体器件

    公开(公告)号：US20160284680A1

    公开(公告)日：2016-09-29

    申请号：US15050607

    申请日：2016-02-23

    申请人： Changseop YOON ,  Junggun YOU ,  YoungJoon PARK ,  Jeonghyo LEE

    发明人： Changseop YOON ,  Junggun YOU ,  YoungJoon PARK ,  Jeonghyo LEE

    IPC分类号： H01L27/02 ,  H01L27/11 ,  H01L29/423 ,  H01L27/108 ,  H01L29/06

    CPC分类号： H01L29/7846 ,  H01L21/76224 ,  H01L27/11807 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66621 ,  H01L29/66659

    摘要： A semiconductor device includes a first device isolation layer defining active regions spaced apart from each other along a first direction on a substrate, second device isolation layers defining a plurality of active patterns protruding from the substrate, the second device isolation layers extending in the first direction to be spaced apart from each other in a second direction and connected to the first device isolation layer, a gate structure extending in the second direction on the first device isolation layer between the active regions, a top surface of the second device isolation layer being lower than a top surface of the active pattern, a top surface of the first device isolation layer being higher than the top surface of the active pattern, and at least part of a bottom surface of the gate structure being higher than the top surface of the active pattern.

    摘要翻译： 半导体器件包括：第一器件隔离层，其限定沿着衬底上的第一方向彼此间隔开的有源区，第二器件隔离层限定从衬底突出的多个有源图案，第二器件隔离层沿第一方向延伸 在第二方向上彼此间隔开并连接到第一器件隔离层，栅极结构在第一器件隔离层上的第二方向上延伸在有源区之间，第二器件隔离层的顶表面较低 比活性图案的顶表面，第一器件隔离层的顶表面高于有源图案的顶表面，并且栅极结构的底表面的至少一部分高于活性图案的顶表面 模式。

    Semiconductor Devices and Methods for Manufacturing the Same
    9.
    发明申请
    Semiconductor Devices and Methods for Manufacturing the Same 有权
    半导体器件及其制造方法

    公开(公告)号：US20160293546A1

    公开(公告)日：2016-10-06

    申请号：US15082820

    申请日：2016-03-28

    申请人： Changseop YOON ,  Hyung Jong LEE ,  Boram IM

    发明人： Changseop YOON ,  Hyung Jong LEE ,  Boram IM

    IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L29/165 ,  H01L29/161 ,  H01L29/16 ,  H01L23/535 ,  H01L29/78

    CPC分类号： H01L23/5283 ,  H01L21/823871 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/0207 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7851

    摘要： The inventive concepts relate to a semiconductor device including a field effect transistor and a method for manufacturing the same. The semiconductor device includes a substrate including first and second source/drain regions formed thereon, a gate electrode intersecting the substrate between the first and second source/drain regions, and an active contact electrically connecting the first and second source/drain regions to each other. The active contact is spaced apart from the gate electrode. The active contact includes first sub-contacts provided on the first and second source/drain regions so as to be connected to the first and second source/drain regions, respectively, a second sub-contact provided on the first sub-contacts to electrically connect the first sub-contacts to each other, and a barrier layer provided between the second sub-contact and each of the first sub-contacts.

    摘要翻译： 本发明构思涉及包括场效应晶体管的半导体器件及其制造方法。 半导体器件包括：衬底，其包括形成在其上的第一和第二源极/漏极区域;与第一和第二源极/漏极区域之间的衬底相交的栅电极;以及将第一和第二源极/漏极区域彼此电连接的有源触点 。 有源触点与栅电极间隔开。 有源触点包括设置在第一和第二源极/漏极区上的第一子触点，以便分别连接到第一和第二源极/漏极区域，第二子触点设置在第一子触点上以电连接 所述第一子接触彼此接触，以及设置在所述第二子接触件和每个所述第一子接触件之间的阻挡层。

    SEMICONDUCTOR DEVICES INCLUDING INCREASED AREA CONTACTS
    10.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING INCREASED AREA CONTACTS 有权
    半导体器件，包括增加的领域联系

    公开(公告)号：US20160284700A1

    公开(公告)日：2016-09-29

    申请号：US15054852

    申请日：2016-02-26

    申请人： Changseop Yoon ,  SOON CHO

    发明人： Changseop Yoon ,  SOON CHO

    IPC分类号： H01L27/088 ,  H01L29/417 ,  H01L27/02

    CPC分类号： H01L27/0886 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

    摘要： A semiconductor device can include a plurality of active patterns protruding from a substrate and spaced apart on the substrate by first and second distances. A plurality of selective epitaxial growth portions can be each grown on an upper surface of a respective one of the plurality of active patterns. A source/drain contact can be extending across the plurality of selective epitaxial growth portions to remain above top surfaces of first ones of plurality of active patterns that are spaced apart by the first distance between the first ones of plurality of active patterns and can include an extension that extends toward the substrate to below top surfaces of two of the plurality of active patterns that are spaced apart by the second distance between the two of the plurality of active patterns.

    摘要翻译： 半导体器件可以包括从衬底突出并且在衬底上以第一和第二距离间隔开的多个有源图案。 可以在多个有源图案中的相应一个的上表面上生长多个选择性外延生长部分。 源极/漏极接触可以跨越多个选择性外延生长部分延伸，以保持在多个有源图案中的第一个有源图案之间的第一个间隔开的多个有源图案中的第一个之间的顶表面之上，并且可以包括 所述延伸部朝向所述基板延伸到所述多个有源图案中的两个的多个有源图案中的两个间隔开所述多个有源图案中的所述两个之间的第二距离的下表面。