公开(公告)号：US09947770B2

公开(公告)日：2018-04-17

申请号：US12015723

申请日：2008-01-17

申请人： Jian Li ,  Kuo-In Chen ,  Kyle Terril

发明人： Jian Li ,  Kuo-In Chen ,  Kyle Terril

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/66734 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7813

摘要： A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region. The MOSFET also includes a plurality of body contact regions disposed in the each body region adjacent the plurality of source regions, a plurality of source/body contact spacers disposed between the plurality of gate insulator regions above the recessed mesas, a source/body contact disposed above the source/body contact spacers, and a plurality of source/body contact plugs disposed between the source/body contact spacers and coupling the source/body contact to the plurality of body contact regions and the plurality of source regions.

公开(公告)号：US20080246081A1

公开(公告)日：2008-10-09

申请号：US12015723

申请日：2008-01-17

申请人： Jian Li ,  Kuo-In Chen ,  Kyle Terril

发明人： Jian Li ,  Kuo-In Chen ,  Kyle Terril

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66734 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7813

摘要： A trench metal-oxide-semiconductor field effect transistor (MOSFET), in accordance with one embodiment, includes a drain region, a plurality of gate regions disposed above the drain region, a plurality of gate insulator regions each disposed about a periphery of a respective one of the plurality of gate regions, a plurality of source regions disposed in recessed mesas between the plurality of gate insulator regions, a plurality of body regions disposed in recessed mesas between the plurality of gate insulator regions and between the plurality of source regions and the drain region. The MOSFET also includes a plurality of body contact regions disposed in the each body region adjacent the plurality of source regions, a plurality of source/body contact spacers disposed between the plurality of gate insulator regions above the recessed mesas, a source/body contact disposed above the source/body contact spacers, and a plurality of source/body contact plugs disposed between the source/body contact spacers and coupling the source/body contact to the plurality of body contact regions and the plurality of source regions.

摘要翻译： 根据一个实施例的沟槽金属氧化物半导体场效应晶体管（MOSFET）包括漏极区域，设置在漏极区域上方的多个栅极区域，多个栅极绝缘体区域，每个栅极绝缘体区域围绕相应的 所述多个栅极区域中的一个，设置在所述多个栅极绝缘体区域之间的凹入台面中的多个源极区域，设置在所述多个栅极绝缘体区域之间和所述多个源极区域之间的凹入台面中的多个主体区域，以及 漏区。 MOSFET还包括设置在与多个源极区域相邻的每个主体区域中的多个体接触区域，多个源/体接触间隔物，其设置在凹入的台面之上的多个栅极绝缘体区域之间，设置在源极/ 以及多个源/体接触插塞，其设置在源/体接触间隔件之间并将源/体接触件耦合到多个体接触区域和多个源极区域。