公开(公告)号：US06532438B2

公开(公告)日：2003-03-11

申请号：US09200605

申请日：1998-11-30

申请人： Håkan Sjödin ,  Hans Hjelmgren ,  Lars-Peter Jacobson ,  Anders Eklund

发明人： Håkan Sjödin ,  Hans Hjelmgren ,  Lars-Peter Jacobson ,  Anders Eklund

IPC分类号： G06F1750

CPC分类号： G01R31/2846 ,  G06F17/5036

摘要： An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

摘要翻译： 公开了一种用于模拟具有作为集电极/发射极偏置电压的函数的早期电压变化的双极晶体管的改进的系统。 该模拟基于标准的Gummel-Poon模型，并通过早期电压延长进行改进，其中恒定的早期电压被分为几个区域的早期电压代替。 早期电压被调节以适应双极晶体管的测量的早期电压特性的实际变化。 每个区域内的早期电压用于计算双极晶体管基极电荷，然后用于模拟双极晶体管的性能。 这些区域可以通过边界条件的选择来连接在一起。