摘要:
An ESL and ESL holder combination includes a locking mechanism for releasably securing the ESL to the ESL holder, and an ESL provided with at least one gripping means for cooperative engagement with the ESL holder. The ESL holder is attachable to an edge of a shelf, the ESL holder being provided with one or more receiving means such as for example slots for receiving the gripping means and the locking element in cooperative engagement. A spring loaded element is arranged inside the ESL such that the spring loaded element, in a latched position, secures the ESL to the ESL holder when the gripping means is brought into a hooked position in the receiving means. When displaced from its latched position, allowing the gripping means to leave its hooked position, this enables removal of the ESL from the ESL holder.
摘要:
Methods and devices are provided for controlling a fluid flow over a sensing surface within a flow cell. The methods employ laminar flow techniques to position a fluid flow over one or more discrete sensing areas on the sensing surface of the flow cell. Such methods permit selective sensitization of the discrete sensing areas, and provide selective contact of the discrete sensing areas with a sample fluid flow. Immobilization of a ligand upon the discrete sensing area, followed by selective contact with an analyte contained within the sample fluid flow, allows analysis by a wide variety of techniques. Sensitized sensing surfaces, and sensor devices and systems are also provided.
摘要:
An ESL and ESL holder combination includes a locking mechanism for releasably securing the ESL to the ESL holder and an ESL provided with at least one gripping means for cooperative engagement with the ESL holder. A protruding, spring loaded locking element is arranged on the ESL for cooperative engagement with the shelf edge rail. The ESL holder is attachable to the edge of a shelf, the ESL holder being provided with one or more receiving means such as slots for receiving the gripping means and the locking element in cooperative engagement. The spring loaded locking element arranged adjacent to the gripping means and positioned on the ESL such that the spring loaded locking element cannot enter the receiving means on the ESL holder during insertion of the gripping means into the receiving means, and such that it enters the receiving means by spring action when the gripping means is brought into a hooked position, in the receiving means. The spring loaded locking element prevents removal of the ESL from the ESL holder, unless the spring loaded locking element is retracted from its receiving means, and allows for the gripping means to leave its hooked position.
摘要:
Methods and devices are provided for controlling a fluid flow over a sensing surface within a flow cell. The methods employ laminar flow techniques to position a fluid flow over one or more discrete sensing areas on the sensing surface of the flow cell. Such methods permit selective sensitization of the discrete sensing areas, and provide selective contact of the discrete sensing areas with a sample fluid flow. Immobilization of a ligand upon the discrete sensing area, followed by selective contact with an analyte contained within the sample fluid flow, allows analysis by a wide variety of techniques. Sensitized sensing surfaces, and sensor devices and systems are also provided.
摘要:
An arrangement in a semiconductor component includes a highly doped layer on a substrate layer and is delimited by at least one trench extending from the surface of the component through the highly doped layer. A sub-layer between the substrate layer and the highly doped layer is doped with the same type of dopant as the buried collector, but to a lower concentration. The sub-layer causes a more even distribution of the potential lines in the substrate and in a sub-collector layer, thereby eliminating areas of dense potential lines and increasing the breakdown voltage of the component, (i.e., because the breakdown voltage is lower in areas with dense potential lines).
摘要:
A semiconductor includes a buried conducting layer, such as a buried collector, comprises a trench, the walls of which are covered with a layer of a material in which dopant ions diffuse faster than in monocrystalline silicon. A contact area is doped in close proximity to the trench wall. The dopants will diffuse through the layer and form a low resistance connection to the buried layer. The layer may comprise polysilicon or porous silicon, or a silicide. If the material used in the layer is not in itself conducting, the size of the component may be significantly reduced.
摘要:
An ESL and ESL holder combination includes a locking mechanism for releasably securing the ESL to the ESL holder, and an ESL provided with at least one gripping means for cooperative engagement with the ESL holder. The ESL holder is attachable to an edge of a shelf, the ESL holder being provided with one or more receiving means such as for example slots for receiving the gripping means and the locking element in cooperative engagement. A spring loaded element is arranged inside the ESL such that the spring loaded element, in a latched position, secures the ESL to the ESL holder when the gripping means is brought into a hooked position in the receiving means. When displaced from its latched position, allowing the gripping means to leave its hooked position, this enables removal of the ESL from the ESL holder.
摘要:
A conductor 1 crossing a trench around an electrical component 1 is electrically connected to an isolated intermediate conducting region in order to move the field strength concentrations out of the electrical component and into the intermediate conducting region. This prevents avalanche breakdown occurring in the electrical component.
摘要:
An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.