Method and apparatus for determining a process model that models the impact of CAR/PEB on the resist profile
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    发明申请
    Method and apparatus for determining a process model that models the impact of CAR/PEB on the resist profile 有权
    用于确定对CAR / PEB对抗蚀剂轮廓的影响的过程模型的确定方法和装置

    公开(公告)号:US20070282574A1

    公开(公告)日:2007-12-06

    申请号:US11800917

    申请日:2007-05-07

    IPC分类号: G06F17/10

    摘要: An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.

    摘要翻译: 实施例提供了用于确定过程模型的系统和技术。 在操作期间,系统可以接收对光刻工艺的第一光学系统建模的第一光学模型。 接下来,系统可以使用第一光学模型来确定在第二距离上对由第一光学系统形成的第二潜像建模的第二光学模型。 系统还可以使用第一光学模型来确定在第三距离上对由第一光学系统形成的第三潜像进行建模的第三光学模型。 接下来,系统可以接收通过对测试布局进行光刻处理而获得的处理数据。 然后,系统可以使用第一光学模型,第二光学模型,第三光学模型,测试布局和过程数据来确定过程模型。