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1.发明申请Method and apparatus for determining a process model that models the impact of CAR/PEB on the resist profile 有权用于确定对CAR / PEB对抗蚀剂轮廓的影响的过程模型的确定方法和装置公开(公告)号：US20070282574A1
公开(公告)日：2007-12-06
申请号：US11800917
申请日：2007-05-07
IPC分类号： G06F17/10
CPC分类号： G03F7/70675 , G03F7/705 , G03F7/70666
摘要： An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.
摘要翻译： 实施例提供了用于确定过程模型的系统和技术。 在操作期间，系统可以接收对光刻工艺的第一光学系统建模的第一光学模型。 接下来，系统可以使用第一光学模型来确定在第二距离上对由第一光学系统形成的第二潜像建模的第二光学模型。 系统还可以使用第一光学模型来确定在第三距离上对由第一光学系统形成的第三潜像进行建模的第三光学模型。 接下来，系统可以接收通过对测试布局进行光刻处理而获得的处理数据。 然后，系统可以使用第一光学模型，第二光学模型，第三光学模型，测试布局和过程数据来确定过程模型。
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2.发明授权Method and apparatus for determining a process model that models the impact of a CAR/PEB on the resist profile 有权用于确定对CAR / PEB对抗蚀剂轮廓的影响的模型的过程模型的方法和装置公开(公告)号：US07934176B2
公开(公告)日：2011-04-26
申请号：US12774522
申请日：2010-05-05
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F7/705 , G03F7/70666
摘要： An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.
摘要翻译： 实施例提供了用于确定过程模型的系统和技术。 在操作期间，系统可以接收对光刻工艺的第一光学系统建模的第一光学模型。 接下来，系统可以使用第一光学模型来确定在第二距离上对由第一光学系统形成的第二潜像建模的第二光学模型。 系统还可以使用第一光学模型来确定在第三距离上对由第一光学系统形成的第三潜像进行建模的第三光学模型。 接下来，系统可以接收通过对测试布局进行光刻处理而获得的处理数据。 然后，系统可以使用第一光学模型，第二光学模型，第三光学模型，测试布局和过程数据来确定过程模型。
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公开(公告)号：US07853919B2
公开(公告)日：2010-12-14
申请号：US12708348
申请日：2010-02-18
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F1/36 , G03F7/70441 , G03F7/705
摘要： An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then determine a set of mask layers, wherein at least some of the mask layers correspond to the MCR components. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the set of mask layers, and the process data.
摘要翻译： 一个实施例提供了用于确定改进的过程模型的系统和技术，该模型模拟了掩模拐角舍入（MCR）效应。 在操作期间，系统可以接收通过将光刻工艺应用于掩模布局而产生的掩模布局和处理数据。 系统还可以接收未校准的过程模型，其可以包含一组MCR组件。 接下来，系统可以识别掩模布局中的一组角。 然后，系统可以确定一组掩模层，其中至少一些掩模层对应于MCR部件。 接下来，系统可以通过使用掩模层集合和过程数据校准未校准的过程模型来确定改进的过程模型。
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4.发明授权Facilitating process model accuracy by modeling mask corner rounding effects 有权通过模拟掩码角舍入效应来促进过程模型的准确性公开(公告)号：US07707539B2
公开(公告)日：2010-04-27
申请号：US11863624
申请日：2007-09-28
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F1/36 , G03F7/70441 , G03F7/705
摘要： An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then modify the mask layout in proximity to the set of corners to obtain a modified mask layout. Alternatively, the system may determine a set of mask layers. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the modified mask layout and/or the set of mask layers, and the process data.
摘要翻译： 一个实施例提供了用于确定改进的过程模型的系统和技术，该模型模拟了掩模拐角舍入（MCR）效应。 在操作期间，系统可以接收通过将光刻工艺应用于掩模布局而产生的掩模布局和处理数据。 系统还可以接收未校准的过程模型，其可以包含一组MCR组件。 接下来，系统可以识别掩模布局中的一组角。 然后，系统可以在靠近该组角修改掩模布局以获得修改的掩模布局。 或者，系统可以确定一组掩模层。 接下来，系统可以通过使用修改的掩模布局和/或掩模层集合以及过程数据校准未校准的过程模型来确定改进的过程模型。
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5.发明申请METHOD AND APPARATUS FOR DETERMINING A PROCESS MODEL THAT MODELS THE IMPACT OF A CAR/PEB ON THE RESIST PROFILE 有权用于确定汽车/ PEB对耐火材料的影响的工艺模型的方法和装置公开(公告)号：US20100218160A1
公开(公告)日：2010-08-26
申请号：US12774522
申请日：2010-05-05
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F7/705 , G03F7/70666
摘要： An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.
摘要翻译： 实施例提供了用于确定过程模型的系统和技术。 在操作期间，系统可以接收对光刻工艺的第一光学系统建模的第一光学模型。 接下来，系统可以使用第一光学模型来确定在第二距离上对由第一光学系统形成的第二潜像建模的第二光学模型。 系统还可以使用第一光学模型来确定在第三距离上对由第一光学系统形成的第三潜像进行建模的第三光学模型。 接下来，系统可以接收通过对测试布局进行光刻处理而获得的处理数据。 然后，系统可以使用第一光学模型，第二光学模型，第三光学模型，测试布局和过程数据来确定过程模型。
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6.发明授权Method and apparatus for determining a process model that models the impact of CAR/PEB on the resist profile 有权用于确定对CAR / PEB对抗蚀剂轮廓的影响的过程模型的确定方法和装置公开(公告)号：US07743357B2
公开(公告)日：2010-06-22
申请号：US11800917
申请日：2007-05-07
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F7/705 , G03F7/70666
摘要： An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.
摘要翻译： 实施例提供了用于确定过程模型的系统和技术。 在操作期间，系统可以接收对光刻工艺的第一光学系统建模的第一光学模型。 接下来，系统可以使用第一光学模型来确定在第二距离上对由第一光学系统形成的第二潜像建模的第二光学模型。 系统还可以使用第一光学模型来确定在第三距离上对由第一光学系统形成的第三潜像进行建模的第三光学模型。 接下来，系统可以接收通过对测试布局进行光刻处理而获得的处理数据。 然后，系统可以使用第一光学模型，第二光学模型，第三光学模型，测试布局和过程数据来确定过程模型。
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公开(公告)号：US20100146476A1
公开(公告)日：2010-06-10
申请号：US12708348
申请日：2010-02-18
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F1/36 , G03F7/70441 , G03F7/705
摘要： An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then determine a set of mask layers, wherein at least some of the mask layers correspond to the MCR components. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the set of mask layers, and the process data.
摘要翻译： 一个实施例提供了用于确定改进的过程模型的系统和技术，该模型模拟了掩模拐角舍入（MCR）效应。 在操作期间，系统可以接收通过将光刻工艺应用于掩模布局而产生的掩模布局和处理数据。 系统还可以接收未校准的过程模型，其可以包含一组MCR组件。 接下来，系统可以识别掩模布局中的一组角。 然后，系统可以确定一组掩模层，其中至少一些掩模层对应于MCR部件。 接下来，系统可以通过使用掩模层集合和过程数据校准未校准的过程模型来确定改进的过程模型。
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8.发明申请公开(公告)号：US20090089736A1
公开(公告)日：2009-04-02
申请号：US11863624
申请日：2007-09-28
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F1/36 , G03F7/70441 , G03F7/705
摘要： An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then modify the mask layout in proximity to the set of corners to obtain a modified mask layout. Alternatively, the system may determine a set of mask layers. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the modified mask layout and/or the set of mask layers, and the process data.
摘要翻译： 一个实施例提供了用于确定改进的过程模型的系统和技术，该模型模拟了掩模拐角舍入（MCR）效应。 在操作期间，系统可以接收通过将光刻工艺应用于掩模布局而产生的掩模布局和处理数据。 系统还可以接收未校准的过程模型，其可以包含一组MCR组件。 接下来，系统可以识别掩模布局中的一组角。 然后，系统可以在靠近该组角修改掩模布局以获得修改的掩模布局。 或者，系统可以确定一组掩模层。 接下来，系统可以通过使用修改的掩模布局和/或掩模层集合以及过程数据校准未校准的过程模型来确定改进的过程模型。
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