公开(公告)号：US20050160444A1

公开(公告)日：2005-07-21

申请号：US10859236

申请日：2004-06-03

申请人： Lee-Ting Chen

发明人： Lee-Ting Chen

IPC分类号： B65D85/57 ,  B65D85/30 ,  G11B23/03 ,  G11B33/04

CPC分类号： G11B33/045 ,  G11B33/0427

摘要： The present invention discloses an optical disc storage device which comprises an upper and a lower casings of the size and shape allowing them to be assembled together and form an space for accommodating at least one optical disc; at least one protrusion disposed on an inner side of any of the two casings, such that the diameter of the protrusion restricts a positioning hole of the optical disc at the outer edge of the protrusion; a magnetic component disposed adjacent to the center of the protrusion, so that the optical disc storage device can be attached securely onto metal panel of any appliances, such as a refrigerator, an office appliance or a white board, by the action of the magnetic component for exhibitions and easy accesses, which also enables several optical disc storage devices to be adhered together and stacked or aligned neatly together for a convenient storage.

摘要翻译： 本发明公开了一种光盘存储装置，包括尺寸和形状的上壳体和下壳体，使得它们能够组装在一起并形成用于容纳至少一个光盘的空间; 设置在所述两个壳体中的任一个的内侧上的至少一个突起，使得所述突起的直径限制在所述突起的外边缘处的所述光盘的定位孔; 设置在突起的中心附近的磁性部件，使得光盘存储装置可以通过磁性部件的作用牢固地安装在诸如冰箱，办公用具或白板的任何装置的金属板上 用于展览和易于访问，这也使得几个光盘存储设备能够粘合在一起并且堆叠或整齐地排列在一起以便于存储。

公开(公告)号：US20110233537A1

公开(公告)日：2011-09-29

申请号：US12840362

申请日：2010-07-21

申请人： Fang-An SHU ,  Ted-Hong Shinn ,  Sung-Hui Huang ,  Lee-Ting Chen ,  Yung-Sheng Chang

发明人： Fang-An SHU ,  Ted-Hong Shinn ,  Sung-Hui Huang ,  Lee-Ting Chen ,  Yung-Sheng Chang

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： An oxide thin film transistor includes a substrate, a gate layer, an oxide film and a gate insulating layer. The gate layer is disposed on the substrate. The oxide film is disposed on the substrate, and has a source region, a drain region and a channel region. The channel region is located between the source region and the drain region and corresponds to the gate layer. The electric conductivity of the source region and the drain region is greater than that of the channel region. The gate insulating layer is disposed on the substrate and located between the gate layer and the oxide film.

摘要翻译： 氧化物薄膜晶体管包括基板，栅极层，氧化物膜和栅极绝缘层。 栅极层设置在基板上。 氧化膜设置在基板上，具有源极区域，漏极区域和沟道区域。 沟道区位于源区和漏区之间，对应于栅极层。 源极区域和漏极区域的导电率大于沟道区域的导电率。 栅极绝缘层设置在基板上并且位于栅极层和氧化物膜之间。