Method of manufacturing a radiation sensor element
    1.
    发明授权
    Method of manufacturing a radiation sensor element 失效
    制造辐射传感器元件的方法

    公开(公告)号:US5527565A

    公开(公告)日:1996-06-18

    申请号:US289527

    申请日:1994-08-12

    CPC分类号: G01T1/26

    摘要: A method of manufacturing a radiation sensor element. The method includes providing a diamond body which comprises crystalline diamond material which has a nitrogen impurity concentration of less than 150 ppm. The body is typically a synthetic diamond manufactured by a high temperature/high pressure process, or by a chemical vapour deposition process. The body is hydrogenated to cause atomic hydrogen to be incorporated into the diamond crystal lattice. Hydrogenation can be carried out by ion implantation, or by exposing the body to a hydrogen plasma. Where the sensor element is to be used as a counting diamond, electrical contacts are formed on the body, for example by ion implantation.

    摘要翻译: 一种制造辐射传感器元件的方法。 该方法包括提供一种包含氮杂质浓度小于150ppm的结晶金刚石材料的金刚石体。 身体通常是通过高温/高压工艺制造的人造金刚石,或通过化学气相沉积工艺。 氢化体将原子氢引入金刚石晶格中。 氢化可以通过离子注入或通过将体暴露于氢等离子体来进行。 当传感器元件用作计数金刚石时,例如通过离子注入在主体上形成电触点。