公开(公告)号：US5364817A

公开(公告)日：1994-11-15

申请号：US238664

申请日：1994-05-05

Applicant: Water Lur ,  Cheng-Han Huang ,  Shih-Chanh Chang ,  Liang-Chih Lin

Inventor： Water Lur ,  Cheng-Han Huang ,  Shih-Chanh Chang ,  Liang-Chih Lin

IPC: H01L21/285 ,  H01L21/283

CPC classification number: H01L21/28512

Abstract: A method of metallization using a tungsten plug is described. A contact hole is opened to the semiconductor substrate through an insulating layer covering semiconductor structures in and on the semiconductor substrate. A glue layer is deposited conformally over the surface of the insulating layer and within the contact opening. A tungsten plug is formed within the contact opening. The glue layer is removed except for portions of the glue layer underneath the tungsten plug and on the lower sides of the tungsten plug. Ditches are left on the upper sides of the tungsten plug where the glue layer has been removed. The ditches around the tungsten plug are filled with a dielectric material. A second metallization is deposited and patterned. The patterned second metallization does not extend over one side portion of the tungsten plug; that is, there is no dog-bone formation. There is no junction damage through the side portion of the tungsten plug not covered by the second metallization because the dielectric material filling the ditches protects the glue layer from being etched away. In a second embodiment of the invention, after the contact hole is opened, the insulating layer is reflowed forming an overhang around the contact hole. A glue layer is deposited conformally over the surface of the insulating layer and within the contact opening. A tungsten plug is formed within the contact opening.

Abstract translation: 描述了使用钨丝塞的金属化方法。 通过覆盖半导体衬底中半导体结构的绝缘层向半导体衬底开口接触孔。 粘合剂层保形地沉积在绝缘层的表面上并且在接触开口内。 在接触开口内形成钨塞。 除了钨丝塞下方的胶水层的部分和钨丝塞的下侧外，胶层除去。 沟槽留在已经去除胶层的钨插头的上侧。 钨插塞周围的沟槽填充有电介质材料。 沉积和图案化第二金属化。 图案化的第二金属化不在钨塞的一个侧面上延伸; 也就是说，没有狗骨形成。 由于填充沟槽的电介质材料保护胶层不会被蚀刻掉，所以没有被第二金属化覆盖的钨塞的侧部没有结损坏。 在本发明的第二实施例中，在接触孔打开之后，绝缘层被回流，在接触孔周围形成伸出。 粘合剂层保形地沉积在绝缘层的表面上并且在接触开口内。 在接触开口内形成钨塞。