公开(公告)号：US6133155A

公开(公告)日：2000-10-17

申请号：US198308

申请日：1998-11-23

Applicant: Lin Tsai-Sen ,  Chou-Shin Jou ,  Tings Wang ,  Chin-Kang Li

Inventor： Lin Tsai-Sen ,  Chou-Shin Jou ,  Tings Wang ,  Chin-Kang Li

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/3065

CPC classification number: H01L21/02071 ,  G03F7/42 ,  G03F7/427

Abstract: The present invention provides a method for preventing corrosion of an aluminum-containing metallic layer having a plurality of trenches on the surface of a semiconductor chip caused by chlorine atoms residing on side walls of the trenches of the metallic layer after a trench etching process. The method comprises the following steps: (1) removing the photo resistance layer on top of the metallic layer by ashing at temperatures between 178.degree. C. and 200.degree. C. after a trench etching process, (2) using an acidic solution comprising hydroxylamine (NH.sub.2 OH), hydroquinone C.sub.6 H.sub.4 (OH).sub.2, monoethanolanine (HOCH.sub.2 CH.sub.2 NH.sub.2) and water to wash off residues on the surface of the semiconductor chip, and (3) heating the semiconductor chip for a predetermined time period at temperatures between 200.degree. C. and 250.degree. C. so as to completely dissipate the chlorine atoms resided on the side walls of the metallic layer for preventing recurrent corrosion of an aluminum-containing metallic layer.

Abstract translation: 本发明提供了一种在沟槽蚀刻工艺之后，由位于金属层的沟槽的侧壁上的氯原子引起的在半导体芯片的表面上具有多个沟槽的含铝金属层的腐蚀的方法。 该方法包括以下步骤：（1）在沟槽蚀刻工艺之后，在178℃至200℃之间的温度下，通过灰化除去金属层顶部的光电层，（2）使用包含羟胺的酸性溶液 （NH 2 OH），氢醌C 6 H 4（OH）2，单乙醇化（HOCH 2 CH 2 NH 2）和水，以清洗半导体芯片表面上的残留物，和（3）在200℃至200℃的温度下加热半导体芯片预定时间 250℃，以便完全消散存在于金属层的侧壁上的氯原子，以防止含铝金属层的反复腐蚀。