公开(公告)号：US4595289A

公开(公告)日：1986-06-17

申请号：US573816

申请日：1984-01-25

申请人： Martin Feldman ,  Lynn O. Wilson

发明人： Martin Feldman ,  Lynn O. Wilson

IPC分类号： G01B11/24 ,  G01B11/245 ,  G01N21/88 ,  G01N21/956 ,  G03F1/84 ,  G03F7/20 ,  H01L21/30 ,  H01L21/66 ,  G01B11/00

CPC分类号： G03F1/84 ,  G01N21/95607 ,  G03F7/70483

摘要： Integrated-circuit wafers and the lithographic masks and reticles used in their fabrication must be inspected for defects. Conventional systems accomplish such inspection by bright-field illumination and comparison of corresponding portions of two supposedly identical patterns on the workpiece. The minimum-size defect that can be so detected is set by misalignment between the patterns. Dark-field illumination of the portions to be compared significantly enhances the detection capabilities of such an inspection system. For a given misalignment, dark-field illumination permits the detection of defects at least four times smaller than those detectable in a conventional bright-field-illuminated system.

摘要翻译： 必须检查集成电路晶片及其制造中使用的光刻掩模和掩模版的缺陷。 常规系统通过明场照明来完成这种检查，并且将两个所假定的相同图案的对应部分在工件上进行比较。 可以如此检测到的最小尺寸缺陷是通过图案之间的未对准来设定的。 要比较的部分的暗场照明显着增强了这种检查系统的检测能力。 对于给定的未对准，暗场照明允许检测到的缺陷比常规亮场照明系统中可检测的缺陷少至少四倍。