Magnetic level gauge
    1.
    发明授权

    公开(公告)号:US12018973B2

    公开(公告)日:2024-06-25

    申请号:US17753201

    申请日:2020-08-18

    发明人: Bin Qi Songsheng Xue

    IPC分类号: G01B7/14 G01F23/72 G01R33/09

    摘要: A wall-mounted magnetic level gauge for material storage containers, the magnetic level gauge comprises: A magnetic displacement assembly, which is located on the sidewall of the material storage container and generates a mechanical displacement in response to the level of a material in the material storage container. It further includes a magnetic sensor assembly, comprising a protective housing, a magnetoresistive chip, and a processing module located within the protective housing. The protective housing is fixed on the side wall of the material storage container. The magnetoresistive chip is located at a side of the processing module facing a magnet displacement assembly. The magnetic sensor assembly is used to sense a magnetic field produced by the magnet displacement assembly to determine the level of the material in the material storage container. The magnet displacement assembly displaces the magnet according to the level of the material. The magnetoresistive chip senses a magnetic field change of the magnet displacement assembly to determine the level of the material accordingly. The magnetic level gauge has the advantages of simple structure, low power consumption, high sensitivity, and low cost. It is suitable for the solid and liquid material measurement.

    MEMS ENVIRONMENTAL SENSOR AND PREPARATION METHOD THEREFOR

    公开(公告)号:US20230192477A1

    公开(公告)日:2023-06-22

    申请号:US17996425

    申请日:2021-04-15

    IPC分类号: B81B7/00 G01D5/14 B81C1/00

    摘要: The disclosed invention is a MEMS environmental sensor and preparation method thereof. A transfer cavity is produced in the middle of a transfer substrate of a MEMS environmental sensor, and a transfer medium is located inside the transfer cavity. The surface area of an input port is larger than the surface area of an output port. An elastic transfer membrane is provided on the surface of the input port, and an elastic pressure membrane is provided on the surface of the output port. A load bearing cavity is provided in a load bearing substrate, a magnetic sensing element is positioned inside the load bearing cavity, and the load bearing cavity partially overlaps with the output port. The surface area of the input port of the transfer cavity is larger than the surface area of the output port, and on the basis of Pascal's principle, differences in the volume of the transmission cavity are used to transform a small displacement in a region of large volume into a large displacement in a region of small volume. In addition, because the output port and the end of the output port at least partially overlap, and a magnetic sensing element is arranged in the load bearing cavity, a change in displacement is produced, producing a change in a magnetic field, that is converted into a change in electrical resistance, which provides high-sensitivity and low-power detection.

    Automatic magnetic flow recording device

    公开(公告)号:US11636889B2

    公开(公告)日:2023-04-25

    申请号:US15549108

    申请日:2016-02-02

    摘要: An automatic magnetic flow recording device, comprises a multitude of coaxially disposed hard magnetic rotating wheels wherein the hard magnetic rotating wheels are circular, and rotate with respect to each other by a predetermined transmission ratio. Each hard magnetic rotating wheel has at least one corresponding biaxial magnetoresistive angle sensor. The biaxial magnetoresistive angle sensors measure the angular positions of the hard magnetic rotating wheels within the range of 0-360 degrees. The biaxial magnetoresistive angle sensors comprise two single-axis linear magnetoresistive sensors, wherein the single-axis linear magnetoresistive sensors are an X-axis magnetoresistive sensor or a Z-axis magnetoresistive sensor. The X-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component parallel to the tangent of the circumference of the hard magnetic rotating wheel. The Z-axis magnetoresistive sensor of the hard magnetic rotating wheel measures a magnetic field component along the radial direction of the hard magnetic rotating wheel. This flow meter recording device has several advantages compared to electronic flow meters with X, Y biaxial angle sensor. These include flexibility of the mounting position, small adjacent hard magnetic rotating wheel interference, and low power consumption.

    MAGNETIC PROBE-BASED CURRENT MEASUREMENT DEVICE, AND MEASUREMENT METHOD

    公开(公告)号:US20230123660A1

    公开(公告)日:2023-04-20

    申请号:US17907388

    申请日:2021-03-24

    IPC分类号: G01R15/20

    摘要: A magnetic probe-based current measurement device and measurement method is disclosed. The device comprises a conductor for a current under test, a magnetic probe, a magnetic bias structure, and a programmable chip. A conductor has a first axis, a second axis, and a third axis. The conductor is provided with through holes. The direction of the through holes are parallel to the third axis. Vertical projections of the through holes on a first cross section are symmetric about the first axis. At least one of the through holes has a center position located on the first axis. And/or every pair of the through holes have center positions that are symmetric about the first axis. The magnetic probe is provided within the through holes, and is electrically connected to the programmable chip. A sensitive center position of the magnetic probe is located on the first cross section. A vertical projection of the magnetic probe on the first cross section is symmetric about the first axis. The magnetic bias structure is provided within the through holes. A magnetization direction of the magnetic bias structure is perpendicular to a sensitive direction of the magnetic probe. The device is small size and has the advantages of high measurement accuracy, and high adaptability

    Magnetoresistive Z-axis gradient sensor chip

    公开(公告)号:US11536779B2

    公开(公告)日:2022-12-27

    申请号:US15315329

    申请日:2015-05-14

    摘要: A magnetoresistive Z-axis gradient sensor chip, which is used to detect the gradient in the XY plane of a Z-axis magnetic field component generated by a magnetic medium; the sensor chip comprises a Si substrate, a collection of two or two groups of flux guide devices separated a distance Lg and an arrangement of electrically interconnected magnetoresistive sensor units. The magnetoresistive sensor units are located on the Si substrate and located above or below the edge of the flux guide devices as well; the flux guide devices convert the component of the Z-axis magnetic field into the direction parallel to the surface of the Si substrate along the sensing axis direction of the magnetoresistive sensing units. The magnetoresistive sensor units are electrically interconnected into a half bridge or a full bridge gradiometer arrangement, wherein the opposite bridge arms are separated by distance Lg. This sensor chip can be utilized with a PCB or in combination with a PCB plus back-bias magnet with casing. The sensor measures the Z-axis magnetic field gradient by using magnetoresistive sensors with in-plane sensing axes. This sensor chip has several advantages relative to a Hall Effect sensor device, including smaller size, lower power consumption, and higher magnetic field sensitivity.

    LINEAR DISPLACEMENT ABSOLUTE POSITION ENCODER

    公开(公告)号:US20220404171A1

    公开(公告)日:2022-12-22

    申请号:US17904414

    申请日:2021-02-09

    IPC分类号: G01D5/16 G01D5/14

    摘要: Disclosed is linear displacement absolute position encoder used for measuring displacement of a tested apparatus. The linear displacement absolute position encoder comprises a base, a magnetoresistive sensor array, an encoding strip, and a back magnet. The encoding strip is fixed on the base and extends in the direction of a rail of the tested apparatus. The encoding strip is a magnetic material block having recess and protrusion for identifying encoding information of different positions. The magnetoresistive sensor array is arranged between the encoding strip and the back magnet in a non-contact manner. The back magnet is used for generating a non-uniform magnetic field around the encoding strip so as to magnetize the encoding strip. The magnetoresistive sensor array is used for acquiring the position encoding information of the encoding strip by detecting magnetic field information of the encoding strip. The encoder is low cost and can monitor large distances.

    MAGNETIC LEVEL GAUGE
    7.
    发明申请

    公开(公告)号:US20220276085A1

    公开(公告)日:2022-09-01

    申请号:US17753201

    申请日:2020-08-18

    发明人: Bin QI Songsheng XUE

    IPC分类号: G01F23/72 G01R33/09

    摘要: A wall-mounted magnetic level gauge for material storage containers, the magnetic level gauge comprises: A magnetic displacement assembly, which is located on the sidewall of the material storage container and generates a mechanical displacement in response to the level of a material in the material storage container. It further includes a magnetic sensor assembly, comprising a protective housing, a magnetoresistive chip, and a processing module located within the protective housing. The protective housing is fixed on the side wall of the material storage container. The magentoresistive chip is located at a side of the processing module facing a magnet displacement assembly. The magnetic sensor assembly is used to sense a magnetic field produced by the magnet displacement assembly to determine the level of the material in the material storage container. The magnet displacement assembly displaces the magnet according to the level of the material. The magnetoresistive chip senses a magnetic field change of the magnet displacement assembly to determine the level of the material accordingly. The magnetic level gauge has the advantages of simple structure, low power consumption, high sensitivity, and low cost. It is suitable for the solid and liquid material measurement.

    MAGNETIC ISOLATOR
    8.
    发明申请

    公开(公告)号:US20220187389A1

    公开(公告)日:2022-06-16

    申请号:US17593324

    申请日:2020-03-12

    IPC分类号: G01R33/09 G01R33/07

    摘要: The present disclosure discloses a magnetic isolator, including a substrate, a magnetic field generating unit, a magnetic field sensing unit, a shielding layer, and an isolation dielectric, where the magnetic field generating unit includes a current conductor, the current conductor is arranged to extend along a first direction on one side of the substrate, the magnetic field sensing unit and the current conductor are arranged on the same side of the substrate, the magnetic field sensing unit is located on a lateral side of the current conductor, and a distance between the current conductor and the magnetic field sensing unit is greater than 0 along a second direction, where the first direction is perpendicular to the second direction; an isolation dielectric is arranged between the current conductor and the magnetic field sensing unit; and an isolation dielectric is arranged within the distance between the current conductor and the magnetic field sensing unit along the second direction, thereby playing a role in electrical isolation, facilitating improving the isolation strength, and simplifying the process. The shielding layer can absorb external interfering magnetic fields, and further improve the signal-to-noise ratio.

    Modulated magnetoresistive sensor

    公开(公告)号:US11287491B2

    公开(公告)日:2022-03-29

    申请号:US16500912

    申请日:2018-04-04

    IPC分类号: G01R33/09

    摘要: A modulated magnetoresistive sensor consists of a substrate located on a substrate in an XY plane, magnetoresistive sensing elements, a modulator, electrical connectors, an electrical insulating layer, and bonding pads. The sensing direction of the magnetoresistive sensing elements is parallel to the X axis. The magnetoresistive sensing elements are connected in series into a magnetoresistive sensing element string. The modulator is comprised of multiple elongated modulating assemblies. The elongated modulating assemblies consist of three layers—FM1 layer, NM layer, and FM2 layer. The ends of the elongated modulating assemblies are electrically connected to form a serpentine current path. The electrical insulating layer is set between the elongated modulating assemblies and the magnetoresistive sensing elements to separate the elongated modulating assemblies from the magnetoresistive sensing elements. The current modulates the permeability of the elongated modulating assemblies, and it is regulated in order to keep the modulated signal in the linear range of the magnetoresistive sensors. This technique suppresses sensor noise.

    MAGNETORESISTIVE HYDROGEN SENSOR AND SENSING METHOD THEREOF

    公开(公告)号:US20220011385A1

    公开(公告)日:2022-01-13

    申请号:US17309266

    申请日:2019-11-13

    IPC分类号: G01R33/09 G01N27/04

    摘要: A magnetoresistive hydrogen sensor and sensing method thereof, wherein the hydrogen sensor comprises a substrate located in an X-Y plane, magnetoresistive sensing units and magnetoresistive reference units located on the substrate. The magnetoresistive sensing units are electrically connected to form a sensing arm, and the magnetoresistive reference units are electrically connected to form a reference arm. The sensing arm and the reference arm are electrically interconnected to form a referenced bridge structure. The magnetoresistive sensing units and the magnetoresistive reference units may be AMR units having the same magnetic multilayer thin film structure, GMR spin valves, or GMR multilayer film stacks having the same magnetic multilayer thin film structure. The magnetoresistive sensing units and the magnetoresistive reference units are respectively covered with a Pd layer, and a passivating insulation layer is deposited over the Pd layer of the magnetoresistive reference units. The magnetic multilayer thin film structure is made into a serpentine strip circuit by a semiconductor micromachining process. The hydrogen detecting method comprises placing the hydrogen sensor in a gas environment containing hydrogen, the Pd layers covering in the magnetoresistive sensing units absorb hydrogen to change the perpendicular magnetic anisotropy of ferromagnetic layers in the magnetic multilayer thin film structures of the magnetoresistance sensing units, which makes the magnetic moment of the ferromagnetic layer rotate to produce a change in the magnetoresistance value that correlates to the hydrogen concentration. The resulting change of the magnetoresistance value changes the output voltage value of the referenced bridge structure, and this change of the output voltage value of the referenced bridge structure is used to measure the hydrogen concentration.