公开(公告)号：US20180102435A1

公开(公告)日：2018-04-12

申请号：US15836756

申请日：2017-12-08

申请人： François Hébert ,  Madjur Bobde ,  Anup Bhalla

发明人： François Hébert ,  Madjur Bobde ,  Anup Bhalla

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7828 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0847 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/47 ,  H01L29/66666 ,  H01L29/7806

摘要： This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device includes trenched gates each having a stick-up gate segment extended above a top surface of the semiconductor substrate surrounded by sidewall spacers. The semiconductor power device further includes slots opened aligned with the sidewall spacers substantially parallel to the trenched gates. The stick-up gate segment further includes a cap composed of an insulation material surrounded by the sidewall spacers. A layer of barrier metal covers a top surface of the cap and over the sidewall spacers and extends above a top surface of the slots. The slots are filled with a gate material same as the gate segment for functioning as additional gate electrodes for providing a depletion layer extends toward the trenched gates whereby a drift region between the slots and the trenched gate is fully depleted at a gate-to-drain voltage Vgs=0 volt.