公开(公告)号：US20120248433A1

公开(公告)日：2012-10-04

申请号：US13425448

申请日：2012-03-21

申请人： Tadashi NAKANO ,  Mai SUGIKAWA ,  Kosei NODA

发明人： Tadashi NAKANO ,  Mai SUGIKAWA ,  Kosei NODA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/0684 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606

摘要： A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.

摘要翻译： 提供了一种其金属氧化物中的氧空位减小的具有稳定的电特性的半导体器件。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的第一金属氧化物膜，与第一金属氧化物膜接触的源电极和漏极，以及钝化膜 在源电极和漏电极上。 第一绝缘膜，第二金属氧化物膜和第二绝缘膜依次层叠在钝化膜中。

公开(公告)号：US09082860B2

公开(公告)日：2015-07-14

申请号：US13425448

申请日：2012-03-21

申请人： Tadashi Nakano ,  Mai Sugikawa ,  Kosei Noda

发明人： Tadashi Nakano ,  Mai Sugikawa ,  Kosei Noda

IPC分类号： H01L29/786 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/0684 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606

摘要： A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.

摘要翻译： 提供了一种其金属氧化物中的氧空位减小的具有稳定的电特性的半导体器件。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的第一金属氧化物膜，与第一金属氧化物膜接触的源电极和漏极，以及钝化膜 在源电极和漏电极上。 第一绝缘膜，第二金属氧化物膜和第二绝缘膜依次层叠在钝化膜中。