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公开(公告)号：US08395863B2
公开(公告)日：2013-03-12
申请号：US12846183
申请日：2010-07-29
申请人： Jeremy A. Thurn , Ibro Tabakovic , Maissarath Nassirou , Brian Karr , Kurt W. Wierman , Joachim W. Ahner
发明人： Jeremy A. Thurn , Ibro Tabakovic , Maissarath Nassirou , Brian Karr , Kurt W. Wierman , Joachim W. Ahner
CPC分类号： G11B5/3106 , G11B5/10 , G11B5/255 , G11B5/607
摘要： A contact pad includes a first layer of material with a first yield strength and a second layer of material with a second yield strength is laminated to the first layer. A third yield strength of the laminated composite of the first layer and the second layer exceeds the first yield strength and the second yield strength due to the Hall-Petch phenomenon. An overcoat covers an edge of the first layer and the second layer of the contact pad to prevent wear. A method of creating the contact pad or other microelectronic structure includes depositing a first layer of material with a first yield strength on a substrate. A second layer of material with a second yield strength is deposited on the first layer. An edge of the first layer and the second layer is coated with an overcoat material to prevent wear of the first and second layers.
摘要翻译： 接触垫包括具有第一屈服强度的第一材料层和具有第二屈服强度的第二层材料层压到第一层。 第一层和第二层的叠层复合材料的第三屈服强度超过第一屈服强度和由于霍尔 - 彼特现象引起的第二屈服强度。 覆盖层覆盖第一层的边缘和接触垫的第二层以防止磨损。 产生接触焊盘或其它微电子结构的方法包括在衬底上沉积具有第一屈服强度的第一材料层。 具有第二屈服强度的第二层材料沉积在第一层上。 第一层和第二层的边缘涂覆有外涂层材料，以防止第一层和第二层的磨损。
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2.发明申请公开(公告)号：US20080075980A1
公开(公告)日：2008-03-27
申请号：US11526413
申请日：2006-09-25
申请人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
发明人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
IPC分类号： G11B5/66
CPC分类号： G11B5/64 , G11B5/732 , G11B5/7325
摘要： Epitaxial ferroelectric and magnetic recording structures having graded lattice matching layers are disclosed. A single crystal material such as Si may be used as a substrate material upon which the graded lattice matching layers are deposited. The lattice matching layers may comprise metals and metal alloys, or may comprise oxides doped with selected elements or deposited under different oxygen pressures. A recording layer, such as ferroelectric lead zirconium titanate or a magnetic Fe/Pt multilayer structure, is deposited on the graded lattice matching layers.
摘要翻译： 公开了具有分级晶格匹配层的外延铁电和磁记录结构。 可以使用诸如Si的单晶材料作为沉积了渐变晶格匹配层的衬底材料。 晶格匹配层可以包括金属和金属合金，或者可以包括掺杂有选定元素或在不同氧气压力下沉积的氧化物。 诸如铁电铅钛酸锆或磁性Fe / Pt多层结构的记录层沉积在渐变的晶格匹配层上。
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公开(公告)号：US20120026625A1
公开(公告)日：2012-02-02
申请号：US12846183
申请日：2010-07-29
申请人： Jeremy A. Thurn , Ibro Tabakovic , Maissarath Nassirou , Brian Karr , Kurt W. Wierman , Joachim W. Ahner
发明人： Jeremy A. Thurn , Ibro Tabakovic , Maissarath Nassirou , Brian Karr , Kurt W. Wierman , Joachim W. Ahner
IPC分类号： G11B5/127
CPC分类号： G11B5/3106 , G11B5/10 , G11B5/255 , G11B5/607
摘要： A contact pad includes a first layer of material with a first yield strength and a second layer of material with a second yield strength is laminated to the first layer. A third yield strength of the laminated composite of the first layer and the second layer exceeds the first yield strength and the second yield strength due to the Hall-Petch phenomenon. An overcoat covers an edge of the first layer and the second layer of the contact pad to prevent wear. A method of creating the contact pad or other microelectronic structure includes depositing a first layer of material with a first yield strength on a substrate. A second layer of material with a second yield strength is deposited on the first layer. An edge of the first layer and the second layer is coated with an overcoat material to prevent wear of the first and second layers.
摘要翻译： 接触垫包括具有第一屈服强度的第一材料层和具有第二屈服强度的第二层材料层压到第一层。 第一层和第二层的叠层复合材料的第三屈服强度超过第一屈服强度和由于霍尔 - 彼特现象引起的第二屈服强度。 覆盖层覆盖第一层的边缘和接触垫的第二层以防止磨损。 产生接触焊盘或其它微电子结构的方法包括在衬底上沉积具有第一屈服强度的第一材料层。 具有第二屈服强度的第二层材料沉积在第一层上。 第一层和第二层的边缘涂覆有外涂层材料，以防止第一层和第二层的磨损。
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4.发明授权公开(公告)号：US07541105B2
公开(公告)日：2009-06-02
申请号：US11526413
申请日：2006-09-25
申请人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
发明人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
IPC分类号： G11B5/66
CPC分类号： G11B5/64 , G11B5/732 , G11B5/7325
摘要： Epitaxial ferroelectric and magnetic recording structures having graded lattice matching layers are disclosed. A single crystal material such as Si may be used as a substrate material upon which the graded lattice matching layers are deposited. The lattice matching layers may comprise metals and metal alloys, or may comprise oxides doped with selected elements or deposited under different oxygen pressures. A recording layer, such as ferroelectric lead zirconium titanate or a magnetic Fe/Pt multilayer structure, is deposited on the graded lattice matching layers.
摘要翻译： 公开了具有分级晶格匹配层的外延铁电和磁记录结构。 可以使用诸如Si的单晶材料作为沉积了渐变晶格匹配层的衬底材料。 晶格匹配层可以包括金属和金属合金，或者可以包括掺杂有选定元素或在不同氧压下沉积的氧化物。 诸如铁电铅钛酸锆或磁性Fe / Pt多层结构的记录层沉积在渐变的晶格匹配层上。
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