公开(公告)号：US20120098086A1

公开(公告)日：2012-04-26

申请号：US13339427

申请日：2011-12-29

申请人： Shunpei YAMAZAKI ,  Maki TOGAWA ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Maki TOGAWA ,  Yasuyuki ARAI

IPC分类号： H01L21/762 ,  H01L29/12

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.

摘要翻译： 提供SOI衬底和SOI衬底的制造方法，通过其可以扩大衬底并提高其生产率。 一种切割第一单晶硅衬底以形成具有芯片尺寸的第二单晶硅衬底的步骤（A）; 在所述第二单晶硅衬底的一个表面上形成绝缘层并在所述第二单晶衬底中形成脆化层的步骤（B）; 以及将具有绝缘表面的衬底和所述第二单晶硅衬底之间的绝缘层接合在其间的步骤（C），并且进行热处理以沿着所述脆化层分离所述第二单晶硅衬底，并且形成单晶硅 进行具有绝缘面的基板上的薄膜。

公开(公告)号：US08101466B2

公开(公告)日：2012-01-24

申请号：US12076793

申请日：2008-03-24

申请人： Shunpei Yamazaki ,  Maki Togawa ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Maki Togawa ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.

摘要翻译： 提供SOI衬底和SOI衬底的制造方法，通过其可以扩大衬底并提高其生产率。 一种切割第一单晶硅衬底以形成具有芯片尺寸的第二单晶硅衬底的步骤（A）; 在所述第二单晶硅衬底的一个表面上形成绝缘层并在所述第二单晶衬底中形成脆化层的步骤（B）; 以及将具有绝缘表面的衬底和所述第二单晶硅衬底之间的绝缘层接合在其间的步骤（C），并且进行热处理以沿着所述脆化层分离所述第二单晶硅衬底，并且形成单晶硅 进行具有绝缘面的基板上的薄膜。

公开(公告)号：US09111997B2

公开(公告)日：2015-08-18

申请号：US13339427

申请日：2011-12-29

申请人： Shunpei Yamazaki ,  Maki Togawa ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Maki Togawa ,  Yasuyuki Arai

IPC分类号： H01L21/00 ,  H01L21/762 ,  H01L21/84

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.

摘要翻译： 提供SOI衬底和SOI衬底的制造方法，通过其可以扩大衬底并提高其生产率。 一种切割第一单晶硅衬底以形成具有芯片尺寸的第二单晶硅衬底的步骤（A）; 在所述第二单晶硅衬底的一个表面上形成绝缘层并在所述第二单晶衬底中形成脆化层的步骤（B）; 以及将具有绝缘表面的衬底和所述第二单晶硅衬底之间的绝缘层接合在其间的步骤（C），并且进行热处理以沿着所述脆化层分离所述第二单晶硅衬底，并且形成单晶硅 进行具有绝缘面的基板上的薄膜。

公开(公告)号：US20080237779A1

公开(公告)日：2008-10-02

申请号：US12076793

申请日：2008-03-24

申请人： Shunpei Yamazaki ,  Maki Togawa ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Maki Togawa ,  Yasuyuki Arai

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L21/76254 ,  H01L21/84 ,  H01L2924/0002 ,  H01L2924/00

摘要： An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.

摘要翻译： 提供SOI衬底和SOI衬底的制造方法，通过其可以扩大衬底并提高其生产率。 一种切割第一单晶硅衬底以形成具有芯片尺寸的第二单晶硅衬底的步骤（A）; 在所述第二单晶硅衬底的一个表面上形成绝缘层并在所述第二单晶衬底中形成脆化层的步骤（B）; 以及将具有绝缘表面的衬底和所述第二单晶硅衬底之间的绝缘层接合在其间的步骤（C），并且进行热处理以沿着所述脆化层分离所述第二单晶硅衬底，并且形成单晶硅 进行具有绝缘面的基板上的薄膜。