Abstract:
The invention provides a semiconductor device for the detection of an active site-containing protein or a ligand thereof in a solution, said device comprising at least one insulating or semi-insulating layer; at least one conducting semiconductor layer, two conducting pads on top of the upper layer making electrical contact with said at least one conducting semi-conductor layer, such that electrical current can flow between them at a finite distance from the surface of the device; a protective molecular layer fabricated on top of said upper layer and protecting said layer from corrosion; and said ligand or active site-containing protein linked to said protective molecular layer. Exposure of said ligand or active site-containing protein to a solution containing said active site-containing protein or ligand, respectively, causes a current change through the device when a constant electric potential is applied between the two conducting pads. The semi-conductor device can be seen as a molecularly controlled semiconductor resistor (MOCSER) protein sensor based on doped and undoped GaAs stack structure. The GaAs is protected against etching in aqueous environments by the protective molecular layer.
Abstract:
The invention provides a semiconductor device for the detection of an active site-containing protein or a ligand thereof in a solution, said device comprising at least one insulating or semi-insulating layer; at least one conducting semiconductor layer, two conducting pads on top of the upper layer making electrical contact with said at least one conducting semiconductor layer, such that electrical current can flow between them at a finite distance from the surface of the device; a protective molecular layer fabricated on top of said upper layer and protecting said layer from corrosion; and said ligand or active site-containing protein linked to said protective molecular layer. Exposure of said ligand or active site-containing protein to a solution containing said active site-containing protein or ligand, respectively, causes a current change through the device when a constant electric potential is applied between the two conducting pads. The semiconductor device can be seen as a molecularly controlled semiconductor resistor (MOCSER) protein sensor based on doped and undoped GaAs stack structure. The GaAs is protected against etching in aqueous environments by the protective molecular layer.